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C-P-1994.04R. Klann, T. Höfer, R. Buhleier, T. Elsaesser, J.W. Tomm
Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
Journal of Applied Physics 77 (1995) 277-286
URL, DOI or PDF-File
C-P-1994.06J.W. Tomm, K.H. Herrmann, S. Haertle, T. Kelz, M. Mocker, T. Elsaesser, R. Klann, V.B. Novikov, V.G. Talalaev, V.E. Todorovskii, H. Böttner
Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields
Inst. Phys. Conf. Ser. 144 (1995) 135-139
C-P-1995.01J.W. Tomm, M. Mocker, T. Kelz, T. Elsaesser, R. Klann, B.V. Novikov, V.G. Talalaev, V.E. Tudorovskii, H. Böttner
Threshold of stimulated emission in multi-valley lead salts
Journal of Applied Physics 78 (1995) 7247-7254
URL, DOI or PDF-File
C3-P-1996.13A. Richter, J.W. Tomm, C. Lienau, J. Luft
Optical near-field photocurrent spectroscopy - a new technique for analyzing microscopic aging processes in optoelectronic devices
Appl. Phys. Lett. 69 (1996) 3981-3983
URL, DOI or PDF-File
C3-P-1996.18C. Lienau, A. Richter, J.W. Tomm
Near-field photocurrent spectroscopy: A novel technique for studying defects and aging in high-power semiconductor lasers (invited paper)
Applied Physics A 64 (1997) 341-351
URL, DOI or PDF-File
C3-P-1996.19A. Richter, C. Lienau, J.W. Tomm
Waveguide effect on the image formation process in near-field photocurrent spectroscopy of semiconductor laser diodes
Surf. & Interf. Analysis 25 (1997) 573-582
C2-P-1997.22J.W. Tomm, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker
The use of fourier-transform photo-current spectroscopy for the analysis of aging properties of high power laser diode arrays
Defect Recognition and Image Processing in Semiconductors, INST Phys. Conf. Series 160 (1997) 471-474
C2-P-1996.18J.W. Tomm, A. Bärwolff, C. Lier, T. Elsaesser, F.X. Daiminger, S. Heinemann
Laser-based facet inspection system
SPIE Proceedings Series 3000 (1997) 90-98
URL, DOI or PDF-File
C2-P-1996.22J.W. Tomm, A. Bärwolff, U. Menzel, C. Lier, T. Elsaesser, F.X. Daiminger, S. Heinemann
Aging behaviour of high-power laser arrays monitored by photocurrent spectroscopy
SPIE Proceedings 3004 (1997) 134-144
URL, DOI or PDF-File
C2-P-1996.10J.W. Tomm, A. Bärwolff, U. Menzel, M. Voss, R. Puchert, T. Elsaesser, F.X. Daiminger, S. Heinemann, J. Luft
Monitoring of aging properties of AlGaAs high-power laser arrays
Journal of Applied Physics 81 (1997) 2059-2063
URL, DOI or PDF-File
C2-P-1997.05J.W. Tomm, A. Jaeger, A. Bärwolff, T. Elsaesser
Aging properties of high power laser diode arrays analyzed by fourier-transform photocurrent measurements
Appl. Phys. Lett. 71 (1997) 2233-2235
URL, DOI or PDF-File
C2-P-1996.21J.W. Tomm, A. Richter, C. Lienau, T. Elsaesser, J. Luft
Near-field optical-beam-induced current spectroscopy as tool for analyzing aging processes in diode lasers
SPIE Proceedings 3001 (1997) 29-38
URL, DOI or PDF-File
C2-P-1997.20W. Hoerstel, W. Kraak, W.T. Masselink, Y.I. Mazur, G.G. Tarasov, E.V. Kurmenko, J.W. Tomm
Spin-flip effects in the magnetoluminescence and magnetoresistance of semimagnetic narrow-gap Hg1-x-yCdχMnyTe
Phys. Rev. B 58 (1998) 4531-4537
URL, DOI or PDF-File
C2-P-1997.07R. Puchert, J. W. Tomm, A. Jaeger, A. Bärwolff, J. Luft, W. Späth
Emitter failure and thermal facet load in high-power laser diode arrays
Applied Physics A 66 (1998) 483 - 486
URL, DOI or PDF-File
C2-P-1998.01G. G. Tarasov, S. R. Lavoric, Yu. I. Mazur, J. W. Tomm
FIR phonon spectroscopy of quanternary Hg1-x-yCdx MnyTe
J. Crystal Growth 184/185 (1998) 1214 -1218
URL, DOI or PDF-File
C2-P-1998.06G.G. Tarasov, Yu. I. Mazur, A. Rakitin, M.P. Lisitsa, S.R. Lavoric, J.W. Tomm, A.. Litvinchuk
Spectroscopy of phonon states in narrow-gap HgCdMnTe(Se) semiconductors
Asian J. of Spectrosc. 2 (1998) 1-29
C2-P-1997.21J.W. Tomm, A. Bärwolff, A. Jaeger, T. Elsaesser, J. Bollmann, W.T. Masselink, A. Gerhardt, J. Donecker
Deep level spectroscopy of high-power laser diode arrays
Journal of Applied Physics 84 (1998) 1325-1332
URL, DOI or PDF-File
C2-P-1997.04Tomm, J.W., Bärwolff, A., Lienau, Ch., Richter, A., Jaeger, A., Donecker, J., Gerhardt, A., Daiminger, F.X., Heinemann, S.
Monitoring the aging of high-power laser diode arrays
SPIE Proceedings Series 3359 (1998) 2-13
URL, DOI or PDF-File
C2-P-1997.15J.W. Tomm, A. Bärwolff, R. Puchert, A. Jaeger, T. Elsaesser
Optical probes as tools for the investigation of aging properties of high-power laser diode arrays
SPIE Proceedings Series 3244 (1998) 576-584
URL, DOI or PDF-File
C2-P-1998.04J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F.X. Daiminger, A. Gerhardt, J. Donecker
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices
Appl. Phys. Lett. 73 (1998) 3908-3910
URL, DOI or PDF-File
C2-P-1998.09K.H. Herrmann, J.W. Tomm
Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy
SPIE Proceedings 3890 (1999) 2-9
URL, DOI or PDF-File
C2-P-1998.08K.H. Herrmann, J.W. Tomm, H. Al-Otaibi
Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index structures
Semic. Sci. & Technol. 14 (1999) 293-297
URL, DOI or PDF-File
C2-P-1998.10K.H. Herrmann, J.W. Tomm, H. Al-Otaibi
Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures
SPIE Proceedings 3890 (1999) 70-74
URL, DOI or PDF-File
C2-P-1998.19G. G. Tarasov, Yu I Mazur, M.P. Lisitsa, S.R. Lavoric, A.S. Rakitin, J.W. Tomm, A. P. Litvinchuk
Far-infrared reflectivity study of lattice dynamics of narrow-gap HgCdMnTe semiconductors
Semic. Sci. & Technol. 14 (1999) 187-197
URL, DOI or PDF-File
C2-P-1998.13G.G. Tarasov, A. Rakitin, Yu. I. Mazur, J.W. Tomm, W.T. Masselink
Phonon-assisted magnetopolaron effect in diluted magnetic semiconductors
Phys. Rev. B 59 (1999) 2731-2736
URL, DOI or PDF-File
C2-P-1999.04Jens W. Tomm
Probing diode lasers with light - photocurrent reveals information on defects and strain in optoelectronic devices
LEOS Letters 13 (1999) 20-22
URL, DOI or PDF-File
C2-P-1997.13J.W. Tomm, Y.I. Mazur, M.P. Lisitsa, G.G. Tarasov, F. Fuchs
Photoluminescence excitation due to hot excitons in narrow-gap Hg1-x-yCdxMnyTe
Semic. Sci. & Technol. 14 (1999) 148-155
URL, DOI or PDF-File
C2-P-1998.14J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker, D. Lorenzen, F.X. Daiminger, S. Weiß, M. Hutter, E. Kaulfersch, H. Reichl
Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes
Journal of Applied Physics 86 (1999) 1196-1201
URL, DOI or PDF-File
C2-P-1998.17J.W. Tomm, R. Müller, A. Bärwolff, M. Neuner, T. Elsaesser, D. Lorenzen, F.X. Daiminger, A. Gerhardt, J. Donecker
Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays
SPIE Proceedings Series 3626 (1999) 138-147
URL, DOI or PDF-File
C2-P-1999.12A. Baerwolff, J. W. Tomm, R. Müller, S. Weiß, M. Hutter, H. Oppermann, H. Reichl
Spectroscopic measurement of mounting-induced strain in optoelectronic devices
IEEE Transactions on Advanced Packaging 23 (2000) 170-175
URL, DOI or PDF-File
C2-P-2000.04W. Braun, P. Dowd, C.-Z. Guo, S.-L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsaesser, D. J. Smith
Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100 nm-1550 nm range
Journal of Applied Physics 88 (2000) 3004-3014
URL, DOI or PDF-File
C2-P-2000.07F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maassdorf, J. W. Tomm, P. Kurpas, M. Achouche, J. Würfel, M. Weyers
Effect of high-temperature annealing on GalnP/GaAs HBT structures grown by LP-MOVPE
Journal of Electronic Materials 29 (2000) 205-209
URL, DOI or PDF-File
C2-P-1999.06G. Erbert, A. Bärwolff, J. Sebastian, J.W. Tomm
High-power broad-area diode lasers and laser bars
High-power diode lasers, Fundamentals, Technology, Applications, R. Diehl (Ed.), Springer Verlag, Berlin 78 (2000) 173-223
C2-P-2000.06K. H. Herrmann, Hessa Al-Otaibi, J. W. Tomm
Photocurrent spectroscopy of QW GRIN laser structures
Materials Science and Engineering B 74 (2000) 61-65
URL, DOI or PDF-File
C2-P-1996.15R. Puchert, A. Bärwolff, M. Voss, U. Menzel, J.W. Tomm, J. Luft
Transient thermal behavior of high power diode laser arrays
IEEE Transactions on Components Packing and Manufacturing Technics Part B 23 (2000) 95-100
C2-P-2000.12G. Tarasov, Yu. I. Mazur, Z.Ya.Zhuchenko, A. Maaßdorf, D. Nickel, J.W. Tomm, H. Kissel, C. Walther, W.T. Masselink
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
Journal of Applied Physics 88 (2000) 7162-7170
URL, DOI or PDF-File
C2-P-2000.13J.W. Tomm, A. Bärwolff
Aging Properties of 840 nm ion-implanted VCSEL's monitored by analysis of their photoelectric properties
SPIE Proceedings 3946 (2000) 30-5
URL, DOI or PDF-File
C2-P-2000.03J. W. Tomm, A. Bärwolff, T. Elsaesser, J. Luft
Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers
Applied Physics Letters 77 (2000) 747-749
URL, DOI or PDF-File
C2-P-1999.10J. W. Tomm, T. Günther, Ch. Lienau, A. Gerhardt, J. Donecker
Near-field photocurrent spectroscopy in diode laser devices
J. Crystal Growth 210 (2000) 296-302
URL, DOI or PDF-File
C2-P-1999.09J. W. Tomm, E. Thamm, A. Baerwolff, T. Elsaesser, J. Luft, M. Baeumler, K. S. Mueller, W. Jantz, I. Rechenberg, G. Erbert
Facet degradation of high-power diode laser arrays
Applied Physics A 70 (2000) 377-381
URL, DOI or PDF-File
C2-P-1999.05J.W. Tomm, B. Ullrich, X.G. Qiu, A.Ohtomo, M. Kawasaki, H. Koinuma, Y. Segawa
Optical and photoelectrical properties of oriented ZnO films
Journal of Applied Physics 87 (2000) 1844-8
URL, DOI or PDF-File
C2-P-2000.10B. Ullrich, J. W. Tomm, N. M. Dushkina, Y. Tomm, H. Sakai, Y. Segawa
Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition
Solid State Communications 116 (2000) 33-5
URL, DOI or PDF-File
C2-P-2001.08R. Grunwald, S. Nerreter, J.W. Tomm, S. Schwirzke-Schaaf, F. Dörfel
Automated high-accuracy measuring system for specular micro-reflectivity
SPIE Proceedings 4449 (2001) 111-118
URL, DOI or PDF-File
C3-P-2000.02T. Guenther, V. Malyarchuk, J. W. Tomm, R. Müller, C. Lienau, J. Luft
Near-field photocurrent imaging of the optical mode profiles of semiconductor laser diodes
Applied Physics Letters 78 (2001) 1463-5
URL, DOI or PDF-File
C2-P-2000.16V. Malyarchuck, J.W. Tomm, T. Günther, R. Müller, R. Kunkel, C. Lienau, J. Luft
Large optical cavity waveguides for high-power diode laser applications
SPIE Proceedings 4287 (2001) 111-7
C2-P-2001.01Yu. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Ya. Zhuchenko, W. T. Masselink
Staircase-like spectral dependence of ground-state luminescence time-constants in high-density InAs/GaAs quantum dots
Applied Physics Letters 78 (2001) 3214-16
URL, DOI or PDF-File
C2-P-2001.20A.S. Shkolnik, E.B. Dogonkin, V.P. Evtikhiev, E.Yu. Kotelnikov, I.V. Kudryashof, V.G. Talalaev, B.V. Novikov, J.W. Tomm, G. Gobsch
Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
Nanotechnology 12 (2001) 512-514
URL, DOI or PDF-File
C2-P-2001.04V.G. Talalaev, B.V. Novikov, G. Gobsch, R. Goldhahn, N. Stein, J. W. Tomm, A. Maasdorf, G.E. Cirlin, V.N. Petrov, V.M. Ustinov
Radiative recombination features of metastable quantum dot array
Physica status solidi (b) 224 (2001) 101-105
URL, DOI or PDF-File
C2-P-2001.19F. Dörfel, S. Nerreter, J.W. Tomm, R. Grunwald, R. Kunkel, J. Luft
Microreflectance inspection of diode laser front facets
SPIE Proceedings 4648 (2002) 48-54
C2-P-2001.12A. Gerhardt, J.W. Tomm, R. Müller, A. Bärwolff, D. Lorenzen, J. Donecker
Measurement of mounting-induced strain and defects in high-power laser diodes using Fourier-transform photo-current spectroscopy
Materials Science and Engineering B 91-92 (2002) 476-480
URL, DOI or PDF-File
C2-P-2001.03A. Maaßdorf, S. Gramlich, E. Richter, F. Brunner, M. Weyers, G. Tränkle, J.W. Tomm, Y.I. Mazur, D. Nickel, V. Malyarchuk, T. Guenther, C. Lienau, A. Baerwolff, T. Elsaesser
Minority-carrier kinetics in heavily doped GaAs: C studied by transient photoluminescence
Journal of Applied Physics 91 (2002) 5072-78
URL, DOI or PDF-File
C2-P-2002.02V. Malyarchuk, J.W. Tomm, Ch. Lienau
Uniformity tests of individual segments of interband cascade diode laser nanostacks
Journal of Applied Physics 92 (2002) 2729-2733
URL, DOI or PDF-File
C2-P-2002.03V. Malyarchuk, J.W. Tomm, V. Talalaev, Ch. Lienau, F. Rinner, M. Baeumler
Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Applied Physics Letters 81 (2002) 346-348
URL, DOI or PDF-File
C2-P-2001.10Y.I. Mazur, J.W. Tomm, G.G. Tarasov, H. Kissel, C. Walther, Z.Ya. Zhuchenko, W.T. Masselink
Interdot energy transfer in a system of coupled InAs/GaAs quantum dots
Physica E: Low-dimensional Systems and Nanostructures 13 (2002) 255-258
URL, DOI or PDF-File
C2-P-2002.09J.W. Tomm, A. Gerhardt, T. Elsaesser, D. Lorenzen, P. Hennig
Simultaneous quantification of strain and defects in high-power diode laser devices
Applied Physics Letters 81 (2002) 3269-3271
URL, DOI or PDF-File
C2-P-2002.11J.W. Tomm, A. Gerhardt, D. Lorenzen, P. Henning, H. Roehle
Diode laser testing by taking advantage of its photoelectric properties
SPIE Proceedings 4648 (2002) 9-21
URL, DOI or PDF-File
C2-P-2001.13J.W. Tomm, A. Maaßdorf, Y.I. Mazur, S. Gramlich, E. Richter, F. Brunner, M. Weyers, G. Tränkle, V. Malyarchuk, T. Günther, Ch. Lienau
The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy
Materials Science and Engineering B 91-92 (2002) 25-28
URL, DOI or PDF-File
C2-P-2002.17F. Hatami, W.T. Masselink, L. Schrottke, J.W. Tomm, V. Talalaev, C. Kristukat, A.R. Goni
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
Physical Review B 67 (2003) 085306/1-8
URL, DOI or PDF-File
C2-P-2003.07G. Mussler, L. Däweritz, K.H. Ploog, J.W. Tomm, V. Talalaev
Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)
Applied Physics Letters 83 (2003) 1343-1345
URL, DOI or PDF-File
C2-P-2002.05F. Rinner, J. Rogg, M.T. Kelemen, M. Mikulla, G. Weimann, J.W. Tomm, E. Thamm, R. Poprawe
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
Journal of Applied Physics 93 (2003) 1848-1850
URL, DOI or PDF-File
C2-P-2001.09J.W. Tomm, T. Elsaesser, Yu I. Mazur, H. Kissel, G.G. Tarasov, Z.Ya. Zhuchenko, W.T. Masselink
Transient luminescence of dense InAs/GaAs quantum dot arrays
Physical Review B 67 (2003) 045326/1-8
URL, DOI or PDF-File
C2-P-2003.01J. W. Tomm, A. Gerhardt, R. Müller, M.L. Biermann, J.P. Holland, D. Lorenzen, E. Kaulfersch
Quantitative strain analysis in AlGaAs-based devices
Applied Physics Letters 82 (2003) 4193-4195
URL, DOI or PDF-File
C2-P-2002.10J.W. Tomm, A. Gerhardt, R. Müller, V. Malyarchuk, Y. Sainte-Marie, P. Galtier, J. Nagle, J.-P. Landesman
Spatially-resolved spectroscopic strain measurements on high-power laser diode bars
Journal of Applied Physics 93 (2003) 1354-1362
URL, DOI or PDF-File
C2-P-2002.18J.W. Tomm, F. Rinner, E. Thamm, C. Ribbat, R. Sellin, D. Bimberg
Analysis of heat flows and their impact on the reliability of high-power diode lasers
SPIE Proceedings 4993 (2003) 91-99
C2-P-2004.10M.L. Biermann, St. Duran, K. Peterson, A. Gerhardt, J.W. Tomm, W. Trzeciakowski, A. Bercha
Spectroscopic method of strain analysis in semiconductor quantum-well devices
Journal of Applied Physics 96 (2004) 4056-4065
URL, DOI or PDF-File
C2-P-2003.16A. Gerhardt, J.W. Tomm, S. Schwirzke-Schaaf, J. Nagle, M. Oudart, Y. Sainte-Marie
Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping
The European Physical Journal - Applied Physics 27 (2004) 451-454
C2-P-2004.04A. Gerhardt, F. Weik, T.Q. Tran, J.W. Tomm, T. Elsaesser, J. Biesenbach, H. Müntz, G. Seibold, M.L. Biermann
Device deformation during low-frequency pulsed operation of high-power diode bars
Applied Physics Letters 84 (2004) 3525-3527
URL, DOI or PDF-File
C2-P-2004.03R. Glatthaar, J. Nurnus, U. Vetter, D. Szewczyk, A. Lambrecht, F. Weik, J.W. Tomm
Mid-infrared light sources at room temperature based on lead chalcogenides
SPIE Proceedings 5459 (2004) 54-60
URL, DOI or PDF-File
C2-P-2004.23F. Hatami, L. Schrottke, J.W. Tomm, V. Talalaev, C. Kristukat, A.R. Goni, W.T. Masselink
Optical properties and carrier dynamics of InP quantum dots embedded in GaP
SPIE Proceedings 5352 (2004) 77-89
URL, DOI or PDF-File
C1-P-2003.10V. Lehtovuori, J. Aumanen, P. Myllyperkiö, M. Rini, E.T.J. Nibbering, J. Korppi-Tommola
Transient midinfrared study of light induced dissociation reaction of Ru (dcbpy) (CO)2I2 in solution
J. Phys. Chem. A 108 (2004) 1644-1649
URL, DOI or PDF-File
C2-P-2004.12V.G. Talalaev, J.W. Tomm, N.D. Zakharov, P. Werner, B.V. Novikov, G.É. Cirlin, Yu. B. Samsonenko, A.A. Tonkikh, V.A. Egorov, N.K. Polyakov, V.M. Unstinov
Spectroscopy of exciton states of InAs quantum molecules
Semiconductors 38 (2004) 696-701
URL, DOI or PDF-File
C2-P-2004.11V.G. Talalaev, J.W. Tomm, N.D. Zakharov, P. Werner, B.V. Novikov, A.A. Tonkikh
Transient spectroscopy of InAs quantum dot molecules
Applied Physics Letters 85 (2004) 284-286
URL, DOI or PDF-File
C2-P-2003.15J. W. Tomm, A. Gerhard, M.L. Biermann, J.P. Holland
Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices
The European Physical Journal - Applied Physics 27 (2004) 461-464
C2-P-2003.14J. W. Tomm, V. Strelchuk, A. Gerhard, U. Zeimer, M. Zorn, H. Kissel, M. Weyers, J. Jiménez
Properties of As+-implanted and annealed GaAs and InGaAs quantum-wells: structural and band-structure modifications
Journal of Applied Physics 95 (2004) 1122-1126
URL, DOI or PDF-File
C2-P-2004.07J.W. Tomm, F. Weik, A. Gerhardt, T.Q. Tran, J. Biesenbach, H. Müntz, G. Seibold
Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays
SPIE Proceedings 5336 (2004) 125-131
URL, DOI or PDF-File
C2-P-2004.08F. Weik, J.W. Tomm, R. Glatthaar, U. Vetter, D. Szewczyk, J. Nurnus, A. Lambrecht, M. Grau, R. Meyer, M.C. Amann, B. Spellenberg, M. Bassler
Materials and structural design of a mid-infrared light-emitting device
SPIE Proceedings 5366 (2004) 149-157
URL, DOI or PDF-File
C2-P-2005.18S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, E. C. Larkins
By-emitter degradation analysis of high-power laser bars
Journal of Applied Physics 98 (2005) 063101/1-4
URL, DOI or PDF-File
C2-P-2005.17O. Drachenko, J. Galibert, J. Léotin, J.W. Tomm, M.P. Semtsiv, M. Ziegler, S. Dressler, U. Müller, W.T. Masselink
Electron-optical-phonon interaction in the In0.73Ga0.27As-AlAs intersubband laser
Applied Physics Letters 87 (2005) 072104/1-3
URL, DOI or PDF-File
C2-P-2005.20T. Koprucki, M. Baro, U. Bandelow, T.Q. Tien, F. Weik, J.W. Tomm, M. Grau, M.-C. Amann
Electronic structure and optoelectronic properties of strained InAsSb/GaSb multiple quantum-wells
Applied Physics Letters 87 (2005) 181911/1-3
URL, DOI or PDF-File
C2-P-2004.32A. Kozlowska, M. Latoszek, J.W. Tomm, F. Weik, T. Elsaesser, M. Zbroszczyk, M. Bugajski, B. Spellenberg, M. Bassler
Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
Applied Physics Letters 86 (2005) 203503/1-3
URL, DOI or PDF-File
C2-P-2005.27A. Kozlowska, J.W. Tomm, P. Wawrzyniak, A. Malag, F. Weik, M. Latoszek
Studies of the degradation mechanisms in high-power diode lasers using multi-channel micro-thermography
SPIE Proceedings 5958 (2005) 223-229
C2-P-2005.21A. Kozlowska, P. Wawrzyniak, J.W. Tomm, F. Weik, T. Elsaesser
Deep level emission from high-power diode laser bars detected by multispectral infrared imaging
Applied Physics Letters 87 (2005) 153503/1-3
URL, DOI or PDF-File
C2-P-2004.29A. Kozlowska, F. Weik, J.W. Tomm, A. Malag, M. Latoszek, P. Wawrzyniak, M. Teodorczyk, L Dobrzanski, M. Zbroszczyk, M. Bugajski
Thermal properties of high-power diode lasers investigated by micro-thermography
SPIE Proceedings 5711 (2005) 158-165
URL, DOI or PDF-File
C2-P-2004.06Yu. I. Mazur, Z.M. Wang, G.J. Salamo, Min Xiao, J.W. Tomm, V. Talalaev, H. Kissel
Interdot carrier transfer in asymmetric bi-layers of InAs/GaAs quantum dot structures
Applied Physics Letters 86 (2005) 063102/1-3
URL, DOI or PDF-File
C2-P-2004.31Y.I. Mazur, Z.M. Wang, G.G. Tarasov, G.J. Salamo, J.W. Tomm, V. Talalaev, H. Kissel
Nonresonant tunneling carrier transfer in bi-layer asymmetric InAs/GaAs quantum dots
Physical Review B 71 (2005) 235313/1-8
URL, DOI or PDF-File
C2-P-2005.07J. Nurnus, U. Vetter, J. Koenig, R. Glatthaar, A. Lambrecht, F. Weik, J.W. Tomm
Optically pumped mid infrared emitters built using surface structured PbSe epitaxial layers
SPIE Proceedings 5840 (2005) 212-220
C2-P-2004.27B.S. Passmore, Y.C. Chua, M.O. Manasreh, J.W. Tomm
Longitudinal modes in InAlGaAs/AlGaAs high-power laser diodes
Mater. Res. Soc. Symp. Proc. 829 (2005) 87-92
C2-P-2005.22V. Talalaev, J.W. Tomm, T. Elsaesser, U. Zeimer, J. Fricke, A. Knauer, H. Kissel, M. Weyers, G.G. Tarasov, J. Grenzer, U. Pietsch
Carrier dynamics in laterally strain-modulated InGaAs-quantum wells
Applied Physics Letters 87 (2005) 262103/1-3
URL, DOI or PDF-File
C2-P-2004.26Q.T. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J.W. Tomm, H. Müntz, J. Biesenbach, M. Oudart, J. Nagle, M.L. Biermann
Relaxation of packaging-induced strains in AlGaAs-based high-power diode laser arrays
Applied Physics Letters 86 (2005) 101911/1-3
URL, DOI or PDF-File
C2-P-2004.25Q.T. Tien, J.W. Tomm, M. Oudart, J. Nagle
Mechanical strain and defect distributions in GaAs-based diode lasers monitored during operation
Applied Physics Letters 86 (2005) 111908/1-3
URL, DOI or PDF-File
C2-P-2005.23T.Q. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J.W. Tomm, M. Pommiés, M. Avella, J. Jiménez, M. Oudart, J. Nagle
Screening of high-power diode laser bars by optical scanning
Applied Physics Letters 87 (2005) 211110/1-3
URL, DOI or PDF-File
C2-P-2004.28J.W. Tomm, M.L. Biermann, B.S. Passmore, M.O. Manasreh, A. Gerhardt, T.Q. Tien
Spectroscopic analysis of external stresses in semiconductor quantum-well materials
Mater. Res. Soc. Symp. Proc. 829 (2005) 233-242
C2-P-2004.30J.W. Tomm, F. Weik, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht, B. Spellenberg, M. Bassler, M. Behringer, J. Luft
A novel light-emitting structure for the 3-5 µm spectral range
SPIE Proceedings 5722 (2005) 319-326
URL, DOI or PDF-File
C2-P-2005.24J.W. Tomm, F. Weik, A. Kozlowska, M. Latoszek, M. Bugajski, M. Zbroszczykc
New characterization methods for semiconductor lasers
SPIE Proceedings 6013 (2005) 183-190
C2-P-2005.28P. Wawrzyniak, A. Kozlowska, J.W. Tomm, A. Malag, F. Weik, M. Teodorczyk, M. Latoszek
Screening techniques for high power GaAsP/AlGaAs/GaAs semiconductor lasers
SPIE Proceedings 5958 (2005) 59582K/1-7
C2-P-2004.24F. Weik, J.W. Tomm, R. Glatthaar, U. Vetter, D. Szewczy, J. Nurnus, A. Lambrecht, L. Mechold, B. Spellenberg, M. Bassler
Midinfrared luminescence imaging and its application to the optimization of light emitting diodes
Applied Physics Letters 86 (2005) 041106/1-3
URL, DOI or PDF-File
C2-P-2006.28A. Kozlowska, J. W. Tomm, A. Malag
Microthermographic investigations of aging processes in diode lasers
SPIE Proceedings 6368 (2006) 63680B/1-7
C2-P-2006.22A. Kozlowska, J. W. Tomm, P. Wawrzyniak, F. Weik
Micro-thermography enables rapid inspection of defects in diode lasers
The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2
C2-P-2005.19A. Kozlowska, P. Wawrzyniak, A. Malag, M. Teodorczyk, J.W. Tomm, F. Weik
Reliability screening of diode lasers by multispectral infrared imaging
Journal of Applied Physics 99 (2006) 053101/1-6
URL, DOI or PDF-File
C2-P-2005.34M. Kreissl, T.Q. Tien, J.W. Tomm, D. Lorenzen, A. Kozlowska, M. Latoszek, M. Oudart, J. Nagle
Spatially-resolved and temperature dependent thermal tuning rates of high-power diode laser arrays
Applied Physics Letters 88 (2006) 133510/1-3
URL, DOI or PDF-File
C2-P-2005.31A. Lambrecht, M. Braun, S. Hartwig, J. Nurnus, J. Wöllenstein, F. Weik, J.W. Tomm
New infrared sources for breath analysis
SPIE Proceedings 6093 (2006) 60930B/1-9
URL, DOI or PDF-File
C2-P-2006.27D. Masanotti, F. Causa, F. Weik, M. Ziegler, J. W. Tomm
Analysis of mechanical strain and temperature profiling in high-brightness, parabolic bow-tie laser arrays
SPIE Proceedings 6368 (2006) 63680B/1-7
C2-P-2006.26T. J. Ochalski, D. Pierscinska, K. Pierscinski, M. Bugajski, J. W. Tomm, T. Grunske, A. Kozlowska
Complementary thermo-reflectance and micro-Raman analysis of facet temperatures of diode lasers
Applied Physics Letters 89 (2006) 071104/1-3
URL, DOI or PDF-File
C2-P-2006.32D. Pierscinska, K. Pierscinski, M. Bugajski, J. W. Tomm
Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy
in: Proceedings of 12th International Workshop on Thermal Investigations of ICs, THERMINIC, B. Courtois, M. Rencz, C. Lasance, V. Szekely (Eds.), TIMA Editions, (2006) p. 7-11
URL, DOI or PDF-File
C2-P-2005.30C. Ropers, T.Q. Tien, C. Lienau, J.W. Tomm, P. Brick, N. Lindner, B. Mayer, M. Müller, S. Tautz, W. Schmid
Observation of deep level defects within the waveguide of red-emitting high-power diode lasers
Applied Physics Letters 88 (2006) 133513/1-3
URL, DOI or PDF-File
C2-P-2006.19F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, A. Knigge, M. Weyers
Optically pumped semiconductor disk laser with graded and step indices
Applied Physics Letters 89 (2006) 151120/1-3
URL, DOI or PDF-File
C2-P-2005.35V.G. Talalaev, G.E. Cirlin, A.A. Tonkikh, N.D. Zakharov, P. Werner, U. Gösele, J.W. Tomm, T. Elsaesser
Miniband-related 1.4 - 1.8 µm luminescence of Ge/Si quantum dot superlattices
Nanoscale Research Letters 1 (2006) 137-153
URL, DOI or PDF-File
C2-P-2006.02V. G. Talalaev, J. W. Tomm, A. S. Sokolov, I. V. Shtrom, B. V. Novikov, A. T. Winzer, R. Goldhahn, G. Gobsch, N. D. Zakharov, P. Werner, U. Gösele, G. E. Cirlin, A. A. Tonkikh, V. M. Ustinov, G. G. Tarasov
Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
Journal of Applied Physics 100 (2006) 083704/1-7
URL, DOI or PDF-File
C2-P-2006.20T. Q. Tien, F. Weik, J. W. Tomm, B. Sumpf, M. Zorn, U. Zeimer, G. Erbert
Thermal properties and degradation behavior of red-emitting high-power diode lasers
Applied Physics Letters 89 (2006) 181112/1-3
URL, DOI or PDF-File
C2-P-2006.30J. W. Tomm, J. Jimenez
Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques
Nanoscience and Technology Series (2006)
C2-P-2006.21J. W. Tomm, V. Talalaev
Carrier transfer in quantum-dot lasers
The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2
URL, DOI or PDF-File
C2-P-2006.29J. W. Tomm, V. G. Talalaev
Carrier dynamics in active-region materials for diode laser applications
SPIE Proceedings 6368 (2006) 63680N/1-6
C2-P-2005.32J.W. Tomm, T.Q. Tien, D.T. Cassidy
Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
Applied Physics Letters 88 (2006) 133504/1-3
URL, DOI or PDF-File
C2-P-2005.33J.W. Tomm, T.Q. Tien, M. Oudart, J. Nagle, M.L. Biermann
Strain relaxation and defect creation in diode laser bars
Materials Science in Semiconductor Processing 9 (2006) 215-219
URL, DOI or PDF-File
C2-P-2005.36F. Weik, G. Steinmeyer, J.W. Tomm, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht
A room-temperature continuous-wave operating mid-infrared light emitting device
Journal of Applied Physics 99 (2006) 114506/1-4
URL, DOI or PDF-File
C2-P-2006.23M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. P. Sarzala, D. Lorenzen, J. Meusel, A. Kozlowska
Transient thermal properties of high-power diode laser bars
Applied Physics Letters 89 (2006) 263506/1-3
URL, DOI or PDF-File
C2-P-2006.25R. Aleksiejunas, A. Kadys, K. Jarasiunas, F. Saas, U. Griebner, J. W. Tomm
All-optical analysis of carrier and spin relaxation in InGaAs/GaAs saturable absorber structures
Applied Physics Letters 90 (2007) 102105/1-3
URL, DOI or PDF-File
C2-P-2007.05M. L. Biermann, D. T. Cassidy, T. Q. Tien, J. W. Tomm
Processing-induced strains at solder interfaces in extended semiconductor structures
Journal of Applied Physics 101 (2007) 114512/1-5
URL, DOI or PDF-File
C2-P-2004.34K. Boucke, J. W. Tomm
Chip characterization methods and measurements
in: High-Power Diode-Lasers: Technology and Applications, F. Bachmann, P. Loosen, R. Poprawe (Eds.), Springer, Heidelberg (2007) p. 34-47
C2-P-2006.31D. Pierscinska, K. Pierscinski, M. Bugajski, J. W. Tomm
Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy
physica status solidi (a) 204 (2007) 422-429
URL, DOI or PDF-File
C2-P-2007.07M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, J. W. Tomm, G. Bacher
Temperature-power dependence of catastrophic optical damage in AlGalnP laser diodes
Applied Physics Letters 91 (2007) 041115/1-3
URL, DOI or PDF-File
C2-P-2007.02V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm, N. D. Zakharov, P. Werner, G. E. Cirlin, A. A. Tonkikh
Resonances related to an array of InAs quantum dots and controlled by an external electric field
Semiconductors 41 (2007) 197-204 (Russian original in: Fizika i Tekhnika Poluprovodnikov, 41 (2007) 203-210)
URL, DOI or PDF-File
C2-P-2007.03M. Ziegler, T. Q. Tien, S. Schwirzke-Schaaf, J. W. Tomm, B. Sumpf, G. Erbert, M. Oudart, J. Nagle
Gradual degradation of red-emitting high-power diode laser bars
Applied Physics Letters 90 (2007) 171113/1-3
URL, DOI or PDF-File
C2-P-2008.26S. Bull, J. W. Tomm, E. C. Larkins
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
Journal of Materials Science: Materials in Electronics 19 (2008) S145-S149
URL, DOI or PDF-File
C2-P-2008.27D. Pierscinska, A. Kozlowska, K. Pierscinski, M. Bugajski, J. W. Tomm, M. Ziegler, F. Weik
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
Journal of Materials Science: Materials in Electronics 19 (2008) S150-S154
URL, DOI or PDF-File
C2-P-2008.28M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, S. Schwirzke-Schaaf, J. W. Tomm, A. Danilewsky, G. Bacher
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
Journal of Materials Science: Materials in Electronics 19 (2008) S155-S159
URL, DOI or PDF-File
C2-P-2008.33M. B. Sanayeh, P. Brick, W. Schmidt, B. Mayer, M. Müller, M. Reufer, K. Streubel, M. Ziegler, J. W. Tomm, G. Bacher
The physics of catastrophic optical damage in high-power AlGaInP laser diodes
SPIE Proceedings 6997 (2008) 699703 (12 pages)
URL, DOI or PDF-File
C2-P-2008.20V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, T. Elsaesser
Miniband-related 1.4-1.8µm luminescence of Ge/Si quantum dot superlattices
in: Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, M. Henini (Eds.), Elsevier Science, (2008) p. 324-345
URL, DOI or PDF-File
C2-P-2008.15V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, U. Gösele, B. V. Novikov, A. S. Sokolov, Y. B. Samsonenko, V. A. Egorov, G. E. Cirlin
Transient carrier transfer in tunnel injection structures
Applied Physics Letters 93 (2008) 031105/1-3
URL, DOI or PDF-File
C2-P-2008.05J. W. Tomm, M. Ziegler, T. Q. Tien, F. Weik, P. Hennig, J. Meusel, H. Kissel, G. Seibold, J. Biesenbach, G. Groenninger, G. Herrmann, U. Strauß
Screening of high power laser diode bars in terms of stresses and thermal profiles
SPIE Proceedings 6876 (2008) 687619 (7 pages)
URL, DOI or PDF-File
C2-P-2008.16M. Ziegler, R. Pomraenke, M. Feiger, J. W. Tomm, P. Vasa, C. Lienau, M. B. Sanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge, G. Erbert
Infrared emission from the substrate of GaAs-based semiconductor lasers
Applied Physics Letters 93 (2008) 041101/1-3
URL, DOI or PDF-File
C2-P-2008.09M. Ziegler, V. Talalaev, J. W. Tomm, T. Elsaesser, P. Ressel, B. Sumpf, G. Erbert
Surface recombination and facet heating in high-power diode lasers
Applied Physics Letters 92 (2008) 203506/1-3
URL, DOI or PDF-File
C2-P-2008.03M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. P. Sarzala
Visualization of heat flows in high-power diode lasers by lock-in thermography
Applied Physics Letters 92 (2008) 103513/1-3
URL, DOI or PDF-File
C2-P-2007.12M. Ziegler, J. W. Tomm, T. Elsaesser, C. Matthiesen, M. B. Sanayeh, P. Brick
Real-time thermal imaging of catastrophic optical damage in red-emitting high-power diode lasers
Applied Physics Letters 92 (2008) 103514/1-3
URL, DOI or PDF-File
C2-P-2008.12M. Ziegler, J. W. Tomm, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, J. Biesenbach
Cavity-enhanced thermal emission from semiconductor lasers
Journal of Applied Physics 103 (2008) 104508/1-11
URL, DOI or PDF-File
C2-P-2008.04M. Ziegler, J. W. Tomm, F. Weik, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, G. Seibold, J. Biesenbach
Accurate determination of absolute temperatures of GaAs based high-power diode lasers
SPIE Proceedings 6876 (2008) 68761A (8pages)
URL, DOI or PDF-File
C2-P-2008.32J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mcinerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, R. P. Sarzala
Microthermography of diode lasers: The impact of light propagation on image formation
Journal of Applied Physics 105 (2009) 014502/1-6
URL, DOI or PDF-File
C2-P-2009.07J. Mukherjee, M. Ziegler, J. LeClech, J. W. Tomm, B. Corbett, J. G. Mcinerney, J. P. Reithmaier, S. Deubert, A. Forchel
Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis
SPIE Proceedings 7230 (2009) 72300W/1-7
URL, DOI or PDF-File
C2-P-2009.14B. Piechal, J. W. Tomm, A. Bercha, W. Trzeciakowski, M. Reufer, A. Gomez-Iglesias
Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure
Applied Physics A 97 (2009) 179-184
URL, DOI or PDF-File
C2-P-2008.31J. W. Tomm, M. Ziegler, M. Oudart, J. Nagle, J. Jiménez
Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain
physica status solidi (a) 206 (2009) 1912-1915
URL, DOI or PDF-File
C2-P-2009.06J. W. Tomm, M. Ziegler, V. Talalaev, C. Matthiesen, T. Elsaesser, M. B. Sanayeh, P. Brick, M. Reufer
New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers
SPIE Proceedings 7230 (2009) 72300V/1-9
URL, DOI or PDF-File
C2-P-2009.08M. Ziegler, J. W. Tomm, D. Reeber, T. Elsaesser, U. Zeimer, H. E. Larsen, P. M. Petersen, P. E. Andersen
Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation
Applied Physics Letters 94 (2009) 191101/1-3
URL, DOI or PDF-File
C2-P-2009.23M. B. Smirnov, V. G. Talalaev, B. V. Nowikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, G. E. Cirlin
Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
physica status solidi (b) 247 (2010) 347-352
URL, DOI or PDF-File
C2-P-2010.08M. Ziegler, J. W. Tomm, U. Zeimer, T. Elsaesser
Imaging catastrophic optical mirror damage in high-power diode lasers
Journal of Electronic Materials 39 (2010) 709-714
URL, DOI or PDF-File
C2-P-2010.09J. W. Tomm, M. Ziegler, H. Kissel, J. Biesenbach
Defect imaging in laser diodes by mapping their near-infrared emission
Journal of Electronic Materials 39 (2010) 723-726
URL, DOI or PDF-File
C2-P-2010.11M. Hempel, M. Ziegler, J. W. Tomm, T. Elsaesser, N. Michel, M. Krakowski
Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers
Applied Physics Letters 96 (2010) 251105/1-3
URL, DOI or PDF-File
C2-P-2010.12R. Giri, S. Schwirzke-Schaaf, J. W. Tomm
Extrinsic contributions to photocurrents from quantum-wells
Journal of Applied Physics 108 (2010) 013103/1-6
URL, DOI or PDF-File
C2-P-2010.13S. N. Elliott, P. M. Smowton, M. Ziegler, J. W. Tomm, U. Zeimer
Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes
Journal of Applied Physics 107 (2010) 123116/1-7
URL, DOI or PDF-File
C2-P-2010.14M. Ziegler, M. Hempel, H. E. Larsen, J. W. Tomm, P. E. Andersen, S. Clausen, S. N. Elliot, T. Elsaesser
Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
Applied Physics Letters 97 (2010) 021110/1-3
URL, DOI or PDF-File
C2-P-2010.23M. Hempel, J. W. Tomm, M. Ziegler, T. Elsaesser, N. Michel, M. Krakowski
Catastrophic optical damage at front and rear facets of diode lasers
Applied Physics Letters 97 (2010) 231101/1-3
URL, DOI or PDF-File
C2-P-2010.16V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser, N. D. Zakharov, P. Werner, U. Gösele, Yu. B. Samsonenko, G. E. Cirlin
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
Semiconductors 44 (2010) 1050-1058
URL, DOI or PDF-File
C2-P-2010.30J. W. Tomm, M. Ziegler, M. Hempel, T. Elsaesser
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers
Laser & Photonics Reviews 5 (2011) 422-441
URL, DOI or PDF-File
C2-P-2011.05M. Hempel, La Mattina, F., J. W. Tomm, U. Zeimer, R. Broennimann, T. Elsaesser
Defect evolution during catastrophic optical damage of diode lasers
Semiconductor Science and Technology 26 (2011) 075020/1-10
URL, DOI or PDF-File
C2-P-2011.09R. Pagano, M. Ziegler, J. W. Tomm, I. Esquivias, J. M. G. Tijero, J. R. O'Callaghan, N. Michel, M. Krakowski, B. Corbett
Two-dimensional carrier density distribution inside a high power tapered laser diode
Applied Physics Letters 98 (2011) 221110/1-3
URL, DOI or PDF-File
C2-P-2011.08C. K. Amuzuvi, S. Bull, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, E. C. Larkins
The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars
Applied Physics Letters 98 (2011) 241108/1-3
URL, DOI or PDF-File
C2-P-2011.14M. Hempel, J. W. Tomm, P. Hennig, T. Elsaesser
Emission properties of diode laser bars during pulsed high-power operation
Semiconductor Science and Technology 26 (2011) 092001/1-4
URL, DOI or PDF-File
C2-P-2011.15A. V. Senichev, V. G. Talalaev, J. W. Tomm, N. D. Zakharov, B. V. Novikov, P. Werner, G. E. Cirlin
Tunnel injection emitter structures with barriers comprising nanobridges
Physica Status Solidi-Rapid Research Letters 5 (2011) 385-387
URL, DOI or PDF-File
C2-P-2011.17M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser
Near-field dynamics of broad area diode laser at very high pump levels
AIP Advances 1 (2011) 042148/1-6
URL, DOI or PDF-File
C2-P-2012.02M. Hempel, M. Ziegler, S. Schwirzke-Schaaf, J. W. Tomm, D. Jankowski, D. Schroeder
Spectroscopic analysis of packaging concepts for high-power diode laser bars
Applied Physics A 107 (2012) 371-377
URL, DOI or PDF-File
C2-P-2012.05I. Moreels, D. Kruschke, P. Glas, J. W. Tomm
The dielectric function of PbS quantum dots in a glass matrix
Optical Materials Express 2 (2012) 496-500
URL, DOI or PDF-File
C2-P-2012.17M. Hempel, J. W. Tomm, U. Zeimer, T. Elsaesser
Defect propagation in broad-area diode lasers
Materials Science Forum 725 (2012) 101-104
URL, DOI or PDF-File
C2-P-2012.11S. Bull, J. J. Lim, C. K. Amuzuvi, J. W. Tomm, J. Nagle, B. Sumpf, G. Erbert, N. Michel, M. Krakowski, E. C. Larkins
Emulation of the operation and degradation of high-power laser bars using simulation tools
Semiconductor Science and Technology 27 (2012) 094012/1-7
URL, DOI or PDF-File
C2-P-2012.12M. Hempel, J. W. Tomm, V. Hortelano, N. Michel, J. Jiménez, M. Krakowski, T. Elsaesser
Time-resolved reconstruction of defect creation sequences in diode lasers
Laser & Photonics Reviews 6 (2012) L15-L19
URL, DOI or PDF-File
C2-P-2012.13S. N. Elliott, M. Hempel, U. Zeimer, P. M. Smowton, J. W. Tomm
Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers
Semiconductor Science and Technology 27 (2012) 102001/1-4
URL, DOI or PDF-File
C2-P-2012.14M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser
Near-field evolution in strongly pumped broad area diode lasers
SPIE Proceedings Series 8277 (2012) 82771H/1-8
URL, DOI or PDF-File
C2-P-2012.15M. Olecki, J. W. Tomm, M. Hempel, P. Hennig, T. Elsaesser
Emission properties of diode laser bars during pulsed high-power operation
SPIE Proceedings Series 8241 (2012) 82410/1-6
URL, DOI or PDF-File
C2-P-2012.23V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin
Light-emitting tunnel nanostructures based on quantum dots in the Si and GaAs matrix
Fizika I Technika Poluprovodnikov 46 (2012) 1492-1503
URL, DOI or PDF-File
C2-P-2012.25V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, L. V. Asryan, N. D. Zakharov, P. Werner, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin
Relaxation pathways of excitation in the tunnel-injection structures with quantum dots
Vestnik of St. Petersburg University 4 (2012) 34-35
URL, DOI or PDF-File
C2-P-2012.29J. W. Tomm, M. Hempel, T. Elsaesser
Kinetics of defect propagation during the catastophic optical damage (COD) in broad-area diode lasers
Materials Science Forum 725 (2012) 105-108
URL, DOI or PDF-File
C2-P-2012.30M. Hempel, J. W. Tomm, M. Baeumler, H. Konstanzer, J. Mukherjee, T. Elsaesser
Near-field characteristics of broad-area diode lasers during catastrophic optical damage failure
SPIE Proceedings Series 8432 (2012) 84320O/1-7
URL, DOI or PDF-File
C2-P-2012.31M. Hempel, J. W. Tomm, T. Elsaesser, M. Bettiati
High single-spatial-mode pulsed power from 980 nm emitting diode lasers
Applied Physics Letters 101 (2012) 191105/1-5
URL, DOI or PDF-File
C2-P-2012.32E. V. Bogdanov, N. Y. Minina, J. W. Tomm, H. Kissel
Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AIGaAS/GaAsP/n-AIGaAS laser diode structures: Numerical calculations and experimental results
Journal of Applied Physics 112 (2012) 093113/1-10
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C2-P-2012.38V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. Cirlin
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
Semiconductors 46 (2012) 1460 - 1470
C2-P-2012.43F. Yue, J. W. Tomm, D. Kruschke, P. Glas
Stimulated emission from PbS-quantum dots in glass matrix
Laser & Photonics Reviews 7 (2013) L1-L5
URL, DOI or PDF-File
C2-P-2012.35M. Hempel, M. Chi, P. M. Petersen, U. Zeimer, J. W. Tomm
How does external feedback cause AIGaAs-based diode lasers to degrade?
Applied Physics Letters 102 (2013) 023502/1-4
URL, DOI or PDF-File
C2-P-2012.37F. Yue, J. W. Tomm, D. Kruschke, P. Glas, K. A. Bzheumikohov, Z. C. Margushev
PbS: glass as broad-bandwidth near-infrared light source material
Optics Express 21 (2013) 2287-2296
URL, DOI or PDF-File
C2-P-2012.41M. Hempel, J. Tomm, F. La Mattina, I. Ratschinski, M. Schade, I. Shorubalko, M. Stiefel, H. Leipner, F. Kießling, T. Elsaesser
Microscopic origins of catastrophic optical damage in diode lasers
IEEE Journal of Selected Topics in Quantum Electronics 19 (2013) 1500508/1-8
URL, DOI or PDF-File
C2-P-2013.11F. Yue, J. Tomm, D. Kruschke
Spontaneous and stimulated emission dynamics of PbS quantum dots in a glass matrix
Physical Review B 87 (2013) 195314/1-13
URL, DOI or PDF-File
C2-P-2013.31K. Hestroffer, R. Braun, A. Ugur, J. W. Tomm, S. Hackbarth, B. Roeder, F. Hatami
Surface InP/In0.48Ga0.52P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes
Journal of Applied Physics 114 (2013) 163510/1-5
URL, DOI or PDF-File
C2-P-2013.32M. Hempel, M. Chi, P. M. Petersen, U. Zeimer, M. Weyers, J. W. Tomm
The impact of external optical feedback on the degradation behavior of high-power diode lasers
SPIE Proceedings Series 8605 (2013) 86050L/1-8
URL, DOI or PDF-File
C2-P-2013.33S. N. Elliott, M. Hempel, S. Shutts, U. Zeimer, P. M. Smowton, J. W. Tomm
Comparison of catastrophic optical damage in InP/(AI)GaInP quantum dot and quantum well diode lasers
SPIE Proceedings Series 8640 (2013) 86401H/1-9
URL, DOI or PDF-File
C2-P-2013.34J. W. Tomm, M. Hempel , La Mattina, F., F. M. Kießling, T. Elsaesser
Analysis of bulk and facet failures in AIGaAs-based high-power diode lasers
SPIE Proceedings Series 8640 (2013) 86401F/1-10
URL, DOI or PDF-File
C2-P-2013.39K.-M. Guenther, T. Gimpel, J. W. Tomm, S. Winter, A. Ruibys, S.Kontermann, W. Schade
Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination
Applied Physics Letters 104 (2014) 042107/1-4
URL, DOI or PDF-File
C2-P-2013.40F. Yue, J. W. Tomm, D. Kruschke
Experimental observation of exciton splitting and relaxation dynamics from PbS quantum dots in a glass matrix
Physical Review B 89 (2014) 081303(R)/1-5
URL, DOI or PDF-File
C2-P-2014.09M. Hempel, J. W. Tomm, F. Yue, M. A. Bettiati, T. Elsaesser
Short-wavelength infrared defect emission as a probe of degradation processes in 980 nm single-mode diode lasers
Laser & Photonics Reviews 8 (2014) L59-L64
URL, DOI or PDF-File
C2-P-2014.16M. Hempel, J. W. Tomm
Defect temperature kinetics during catastrophic optical damage in high power diode lasers
SPIE Proceedings Series 9002 (2014) 90021H/1-12
URL, DOI or PDF-File
C3-P-2014.04S. Friede, S. Kuehn, J. W. Tomm, V. Hoffmann, U. Zeimer, M. Weyers, M. Kneissl, T. Elsaesser
Nano-optical analysis of GaN-based diode lasers
Semiconductor Science and Technology 29 (2014) 112001/1-5
URL, DOI or PDF-File
C2-P-2014.25V. G. Talalaev, G. E. Cirlin, L. I. Goray, B. V. Novikov, M. E. Labzovskaya, J. W. Tomm, P. Werner, B. Fuhrmann, J. Schilling, P. N. Racec
Effect of nanobridges on the emission spectra of a quantum dot–quantum well tunneling pair
Semiconductors 48 (2014) 1209–1216
URL, DOI or PDF-File
C2-P-2014.26B. Ullrich, A. K. Singh, M. Bhowmick, P. Barik, D. Ariza-Flores, H. Xi, J. W. Tomm
Photoluminescence lineshape of ZnO
AIP Advances 4 (2014) 123001/1-4
URL, DOI or PDF-File
C2-P-2014.22V. G. Talalaev, G. E. Cirlin, B. V. Novikov, B. Fuhrmann, P. Werner, J. W. Tomm
Ex post manipulation of barriers in InGaAs tunnel injection devices
Applied Physics Letters 106 (2015) 013104/1-5
URL, DOI or PDF-File
C2-P-2015.05M. Hempel, J. W. Tomm, B. Stojetz, H. Koenig, U. Strauss, T. Elsaesser
Kinetics of catastrophic optical damage in GaN-based diode lasers
Semiconductor Science and Technology 30 (2015) 072001/1-6
URL, DOI or PDF-File
C2-P-2015.06F. Yue, J. W. Tomm, D. Kruschke, B. Ullrich, J. Chu
Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots
Applied Physics Letters 107 (2015) 022106/1-5
URL, DOI or PDF-File
C2-P-2015.13M. Hempel, J. W. Tomm, D. Venables, V. Rossin, E. Zucker, T. Elsaesser
Long-term aging and quick stress-testing of 980-nm single-spatial mode lasers
Journal of Lightwave Technology 33 (2015) 4450 - 4456
URL, DOI or PDF-File
C2-P-2015.17B. Leonhäuser, H. Kissel, J. W. Tomm, M. Hempel, A. Unger, J. Biesenbach
High-power diode lasers under external optical feed-back
SPIE Proceedings Series 9348 (2015) 93480M/1-10
URL, DOI or PDF-File
C2-P-2015.18M. Hempel, J. W. Tomm, F. Yue, M. Bettiati, T. Elsaesser
Short-wavelength infrared defect emission as probe for degradation effects in diode lasers
SPIE Proceedings Series 9382 (2015) 93821G/1-6
URL, DOI or PDF-File
C2-P-2015.19M. Hempel, J. W. Tomm, T. Elsaesser, D. Venables, V. Rossin, E. Zucker
Analysis of 980nm emitting single-spatial mode diode lasers at high power levels by complementary imaging techniques
SPIE Proceedings Series 9348 (2015) 93480N /1-6
URL, DOI or PDF-File
A2-P-2016.01Schleich, Wolfgang P., Ranade, Kedar S., Anton, Christian, Arndt, Markus, Aspelmeyer, Markus, Bayer, Manfred, Berg, Gunnar, Calarco, Tommaso, Fuchs, Harald, Giacobino, Elisabeth, Grassl, Markus, Hänggi, Peter, Heckl, Wolfgang M., Hertel, Ingolf-Volker, Huelga, Susana, Jelezko, Fedor, Keimer, Bernhard, Kotthaus, Jörg P., Leuchs, Gerd, Lütkenhaus, Norbert, Maurer, Ueli, Pfau, Tilman, Plenio, Martin B., Rasel, Ernst Maria, Renn, Ortwin, Silberhorn, Christine, Schiedmayer, Jörg, Schmitt-Landsiedel, Doris, Schönhammer, Kurt, Ustinov, Alexey, Walther, Philip, Weinfurter, Harald, Welzl, Emo, Wiesendanger, Roland, Wolf, Stefan, Zeilinger, Anton, Zoller, Peter
Quantum technology: from research to application
Applied Physics B 122 (2016) 1-31
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C2-P-2015.22S. Dadgostar, J. Schmidtbauer, T. Boeck, A. Torres, O. Martínez, J. Jiménez, J. W. Tomm, A. Mogilatenko, W. T. Masselink, F. Hatami
GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission
Applied Physics Letters 108 (2016) 102103/1-5
URL, DOI or PDF-File
C2-P-2016.01M. Hempel, J. W. Tomm, A. Bachmann, C. Lauer, M. Furitsch, U. Strauss, T. Elsaesser
Transient surface modifications during singular heating events at diode laser facets
Semiconductor Science and Technology 31 (2016) 055007/1-6
URL, DOI or PDF-File
C2-P-2016.02J. W. Tomm , M. Hempel, D. Venables , V. Rossin , E. Zucker, T. Elsaesser
Rapid stress-testing vs. long-term aging: a case study of 980-nm emitting single-spatial mode lasers
SPIE Proceedings Series 9733 (2016) 973303/1-6
URL, DOI or PDF-File
C2-P-2016.03M. Winterfeldt , J. Rieprich, S. Knigge, A. Maaßdorf, M. Hempel, R. Kernke, J. W. Tomm, G. Erbert, P. Crump
Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers
SPIE Proceedings Series 9733 (2016) 97330O/1-9
URL, DOI or PDF-File
C2-P-2016.04D. Bonsendorf, S. Schneider, J. Meinschien, J. W. Tomm
Reliability of high power laser diodes with external optical feedback
SPIE Proceedings Series 9733 (2016) 973302/1-10
URL, DOI or PDF-File
C2-P-2016.06R. Kernke, M. Hempel, J. W. Tomm, T. Elsaesser, B. Stojetz, H. König, U. Strauß
Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers
Optical Materials Express 6 (2016) 2139-2146
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C2-P-2016.11J. Jimenez, J. W. Tomm
Spectroscopic analysis of optoelectronic semiconductors
Springer Series in Optical Sciences 202 (2016)
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C2-P-2016.15S. Friede, J. W. Tomm, S. Kuehn, V. Hoffmann, H. Wenzel, M. Weyers
Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers
Semiconductor Science and Technology 31 (2016) 115015/1-9
URL, DOI or PDF-File
C2-P-2017.03S. Friede, J. W. Tomm, S. Kuehn, V. Hoffmann, H. Wenzel
Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
SPIE Proceedings Series 10123 (2017) 1012308/1-7
URL, DOI or PDF-File
C2-P-2017.04J. Rieprich, M. Winterfeldt, J. Tomm, R. Kernke, P. Crump
Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers
SPIE Proceedings Series 10085 (2017) 1008502/1-10
URL, DOI or PDF-File
C2-P-2017.05H. Kissel, P. Wolf, A. Bachmann, C. Lauer, H. Koenig, J. W. Tomm, B. Koehler, U. Strauß, J. Biesenbach
Tailored bars at 976 nm for high-brightness fiber-coupled modules
SPIE Proceedings Series 10086 (2017) 100860B/1-12
URL, DOI or PDF-File