/en/research/projects/3-03/publications/index.html
3-03 Opto Electronic Devices
Project coordinator(s): J. W. Tomm
Publications since 1998 until 21.05.2012
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TZH11J. W. Tomm M. Ziegler M. Hempel T. Elsaesser
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers
Laser & Photonics Reviews 5 (2011) 422-441
URL, DOI or PDF-File
HMT11M. Hempel La Mattina, F. J. W. Tomm U. Zeimer R. Broennimann T. Elsaesser
Defect evolution during catastrophic optical damage of diode lasers
Semiconductor Science and Technology 26 (2011) 075020/1-10
URL, DOI or PDF-File
PZT11R. Pagano M. Ziegler J. W. Tomm I. Esquivias J. M. G. Tijero J. R. O'Callaghan N. Michel M. Krakowski B. Corbett
Two-dimensional carrier density distribution inside a high power tapered laser diode
Applied Physics Letters 98 (2011) 221110/1-3
URL, DOI or PDF-File
ABT11aC. K. Amuzuvi S. Bull J. W. Tomm J. Nagle B. Sumpf G. Erbert N. Michel M. Krakowski E. C. Larkins
The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars
Applied Physics Letters 98 (2011) 241108/1-3
URL, DOI or PDF-File
HTH11M. Hempel J. W. Tomm P. Hennig T. Elsaesser
Emission properties of diode laser bars during pulsed high-power operation
Semiconductor Science and Technology 26 (2011) 092001/1-4
URL, DOI or PDF-File
STT11A. V. Senichev V. G. Talalaev J. W. Tomm N. D. Zakharov B. V. Novikov P. Werner G. E. Cirlin
Tunnel injection emitter structures with barriers comprising nanobridges
Physica Status Solidi-Rapid Research Letters 5 (2011) 385-387
URL, DOI or PDF-File
HTB11M. Hempel J. W. Tomm M. Baeumler H. Konstanzer J. Mukherjee T. Elsaesser
Near-field dynamics of broad area diode laser at very high pump levels
AIP Advances 1 (2011) 042148/1-6
URL, DOI or PDF-File
STN10M. B. Smirnov V. G. Talalaev B. V. Nowikov S. V. Sarangov N. D. Zakharov P. Werner U. Gösele J. W. Tomm G. E. Cirlin
Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
physica status solidi (b) 247 (2010) 347-352
URL, DOI or PDF-File
ZTZ10M. Ziegler J. W. Tomm U. Zeimer T. Elsaesser
Imaging catastrophic optical mirror damage in high-power diode lasers
Journal of Electronic Materials 39 (2010) 709-714
URL, DOI or PDF-File
TZK10J. W. Tomm M. Ziegler H. Kissel J. Biesenbach
Defect imaging in laser diodes by mapping their near-infrared emission
Journal of Electronic Materials 39 (2010) 723-726
URL, DOI or PDF-File
HZT10M. Hempel M. Ziegler J. W. Tomm T. Elsaesser N. Michel M. Krakowski
Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers
Applied Physics Letters 96 (2010) 251105/1-3
URL, DOI or PDF-File
GST10R. Giri S. Schwirzke-Schaaf J. W. Tomm
Extrinsic contributions to photocurrents from quantum-wells
Journal of Applied Physics 108 (2010) 013103/1-6
URL, DOI or PDF-File
ESZ10S. N. Elliott P. M. Smowton M. Ziegler J. W. Tomm U. Zeimer
Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes
Journal of Applied Physics 107 (2010) 123116/1-7
URL, DOI or PDF-File
ZHL10M. Ziegler M. Hempel H. E. Larsen J. W. Tomm P. E. Andersen S. Clausen S. N. Elliot T. Elsaesser
Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
Applied Physics Letters 97 (2010) 021110/1-3
URL, DOI or PDF-File
HTZ10M. Hempel J. W. Tomm M. Ziegler T. Elsaesser N. Michel M. Krakowski
Catastrophic optical damage at front and rear facets of diode lasers
Applied Physics Letters 97 (2010) 231101/1-3
URL, DOI or PDF-File
TSN10aV. G. Talalaev A. V. Senichev B. V. Novikov J. W. Tomm T. Elsaesser N. D. Zakharov P. Werner U. Gösele Yu. B. Samsonenko G. E. Cirlin
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
Semiconductors 44 (2010) 1050-1058
URL, DOI or PDF-File
JMP09A. Jasik J. Muszalski K. Pierscinski M. Bugajski V. G. Talalaev M. Kosmala
Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation
Journal of Applied Physics 106 (2009) 053101/1-8
URL, DOI or PDF-File
LZM09J. LeClech M. Ziegler J. Mukherjee J. W. Tomm T. Elsaesser J.-P. Landesman B. Corbett J. G. Mcinerney J. P. Reithmaier S. Deubert A. Forchel W. Nakwaski R. P. Sarzala
Microthermography of diode lasers: The impact of light propagation on image formation
Journal of Applied Physics 105 (2009) 014502/1-6
URL, DOI or PDF-File
MZL09J. Mukherjee M. Ziegler J. LeClech J. W. Tomm B. Corbett J. G. Mcinerney J. P. Reithmaier S. Deubert A. Forchel
Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis
SPIE Proceedings 7230 (2009) 72300W/1-7
URL, DOI or PDF-File
PTB09B. Piechal J. W. Tomm A. Bercha W. Trzeciakowski M. Reufer A. Gomez-Iglesias
Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure
Applied Physics A 97 (2009) 179-184
URL, DOI or PDF-File
TZO09J. W. Tomm M. Ziegler M. Oudart J. Nagle J. Jiménez
Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain
physica status solidi (a) 206 (2009) 1912-1915
URL, DOI or PDF-File
TZT09J. W. Tomm M. Ziegler V. Talalaev C. Matthiesen T. Elsaesser M. B. Sanayeh P. Brick M. Reufer
New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers
SPIE Proceedings 7230 (2009) 72300V/1-9
URL, DOI or PDF-File
ZTR09M. Ziegler J. W. Tomm D. Reeber T. Elsaesser U. Zeimer H. E. Larsen P. M. Petersen P. E. Andersen
Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation
Applied Physics Letters 94 (2009) 191101/1-3
URL, DOI or PDF-File
BTL08S. Bull J. W. Tomm E. C. Larkins
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
Journal of Materials Science: Materials in Electronics 19 (2008) S145-S149
URL, DOI or PDF-File
PKP08D. Pierscinska A. Kozlowska K. Pierscinski M. Bugajski J. W. Tomm M. Ziegler F. Weik
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
Journal of Materials Science: Materials in Electronics 19 (2008) S150-S154
URL, DOI or PDF-File
SBS08aM. B. Sanayeh P. Brick W. Schmid B. Mayer M. Müller M. Reufer K. Streubel S. Schwirzke-Schaaf J. W. Tomm A. Danilewsky G. Bacher
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
Journal of Materials Science: Materials in Electronics 19 (2008) S155-S159
URL, DOI or PDF-File
SBS08bM. B. Sanayeh P. Brick W. Schmidt B. Mayer M. Müller M. Reufer K. Streubel M. Ziegler J. W. Tomm G. Bacher
The physics of catastrophic optical damage in high-power AlGaInP laser diodes
SPIE Proceedings 6997 (2008) 699703 (12 pages)
URL, DOI or PDF-File
TCT08V. G. Talalaev G. E. Cirlin A. A. Tonkikh N. D. Zakharov P. Werner U. Gösele J. W. Tomm T. Elsaesser
Miniband-related 1.4-1.8µm luminescence of Ge/Si quantum dot superlattices
in: Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, M. Henini (Eds.), Elsevier Science, (2008) p. 324-345
URL, DOI or PDF-File
TTZ08V. G. Talalaev J. W. Tomm N. D. Zakharov P. Werner U. Gösele B. V. Novikov A. S. Sokolov Y. B. Samsonenko V. A. Egorov G. E. Cirlin
Transient carrier transfer in tunnel injection structures
Applied Physics Letters 93 (2008) 031105/1-3
URL, DOI or PDF-File
TZT08J. W. Tomm M. Ziegler T. Q. Tien F. Weik P. Hennig J. Meusel H. Kissel G. Seibold J. Biesenbach G. Groenninger G. Herrmann U. Strauß
Screening of high power laser diode bars in terms of stresses and thermal profiles
SPIE Proceedings 6876 (2008) 687619 (7 pages)
URL, DOI or PDF-File
WSB08M. Wienold M. P. Semtsiv I. Bayrakli W. T. Masselink M. Ziegler K. Kennedy R. Hogg
Optical and thermal characteristics of narrow-ridge quantum-cascade lasers
Journal of Applied Physics 103 (2008) 083113/1-5
URL, DOI or PDF-File
ZPF08M. Ziegler R. Pomraenke M. Feiger J. W. Tomm P. Vasa C. Lienau M. B. Sanayeh A. Gomez-Iglesias M. Reufer F. Bugge G. Erbert
Infrared emission from the substrate of GaAs-based semiconductor lasers
Applied Physics Letters 93 (2008) 041101/1-3
URL, DOI or PDF-File
ZTT08M. Ziegler V. Talalaev J. W. Tomm T. Elsaesser P. Ressel B. Sumpf G. Erbert
Surface recombination and facet heating in high-power diode lasers
Applied Physics Letters 92 (2008) 203506/1-3
URL, DOI or PDF-File
ZTE08bM. Ziegler J. W. Tomm T. Elsaesser G. Erbert F. Bugge W. Nakwaski R. P. Sarzala
Visualization of heat flows in high-power diode lasers by lock-in thermography
Applied Physics Letters 92 (2008) 103513/1-3
URL, DOI or PDF-File
ZTE08aM. Ziegler J. W. Tomm T. Elsaesser C. Matthiesen M. B. Sanayeh P. Brick
Real-time thermal imaging of catastrophic optical damage in red-emitting high-power diode lasers
Applied Physics Letters 92 (2008) 103514/1-3
URL, DOI or PDF-File
ZTE08cM. Ziegler J. W. Tomm T. Elsaesser C. Monte J. Hollandt H. Kissel J. Biesenbach
Cavity-enhanced thermal emission from semiconductor lasers
Journal of Applied Physics 103 (2008) 104508/1-11
URL, DOI or PDF-File
ZTW08M. Ziegler J. W. Tomm F. Weik T. Elsaesser C. Monte J. Hollandt H. Kissel G. Seibold J. Biesenbach
Accurate determination of absolute temperatures of GaAs based high-power diode lasers
SPIE Proceedings 6876 (2008) 68761A (8pages)
URL, DOI or PDF-File
BCT07M. L. Biermann D. T. Cassidy T. Q. Tien J. W. Tomm
Processing-induced strains at solder interfaces in extended semiconductor structures
Journal of Applied Physics 101 (2007) 114512/1-5
URL, DOI or PDF-File
BTo07K. Boucke J. W. Tomm
Chip characterization methods and measurements
in: High-Power Diode-Lasers: Technology and Applications, F. Bachmann, P. Loosen, R. Poprawe (Eds.), Springer, Heidelberg (2007) p. 34-47
PPB07D. Pierscinska K. Pierscinski M. Bugajski J. W. Tomm
Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy
physica status solidi (a) 204 (2007) 422-429
URL, DOI or PDF-File
SBS07M. B. Sanayeh P. Brick W. Schmid B. Mayer M. Müller M. Reufer K. Streubel J. W. Tomm G. Bacher
Temperature-power dependence of catastrophic optical damage in AlGalnP laser diodes
Applied Physics Letters 91 (2007) 041115/1-3
URL, DOI or PDF-File
TNS07V. G. Talalaev B. V. Novikov A. S. Sokolov I. V. Strom J. W. Tomm N. D. Zakharov P. Werner G. E. Cirlin A. A. Tonkikh
Resonances related to an array of InAs quantum dots and controlled by an external electric field
Semiconductors 41 (2007) 197-204 (Russian original in: Fizika i Tekhnika Poluprovodnikov, 41 (2007) 203-210)
URL, DOI or PDF-File
WDW07D. Wu A. B. Descalzo F. Weik F. Emmerling Z. Shen X.-Z. You K. Rurack
A core-modified rubyrin with meso-aryl substituents and phenanthrene-fused pyrrole rings: A highly conjugated near-infrared Dye and Hg2+ probe
Angewandte Chemie-International Edition 47 (2007) 193-197
URL, DOI or PDF-File
ZTS07M. Ziegler T. Q. Tien S. Schwirzke-Schaaf J. W. Tomm B. Sumpf G. Erbert M. Oudart J. Nagle
Gradual degradation of red-emitting high-power diode laser bars
Applied Physics Letters 90 (2007) 171113/1-3
URL, DOI or PDF-File
KTM06A. Kozlowska J. W. Tomm A. Malag
Microthermographic investigations of aging processes in diode lasers
SPIE Proceedings 6368 (2006) 63680B/1-7
KTW06A. Kozlowska J. W. Tomm P. Wawrzyniak F. Weik
Micro-thermography enables rapid inspection of defects in diode lasers
The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2
KWM06A. Kozlowska P. Wawrzyniak A. Malag M. Teodorczyk J.W. Tomm F. Weik
Reliability screening of diode lasers by multispectral infrared imaging
Journal of Applied Physics 99 (2006) 053101/1-6
URL, DOI or PDF-File
KTT06M. Kreissl T.Q. Tien J.W. Tomm D. Lorenzen A. Kozlowska M. Latoszek M. Oudart J. Nagle
Spatially-resolved and temperature dependent thermal tuning rates of high-power diode laser arrays
Applied Physics Letters 88 (2006) 133510/1-3
URL, DOI or PDF-File
LBH06A. Lambrecht M. Braun S. Hartwig J. Nurnus J. Wöllenstein F. Weik J.W. Tomm
New infrared sources for breath analysis
SPIE Proceedings 6093 (2006) 60930B/1-9
URL, DOI or PDF-File
MCW06D. Masanotti F. Causa F. Weik M. Ziegler J. W. Tomm
Analysis of mechanical strain and temperature profiling in high-brightness, parabolic bow-tie laser arrays
SPIE Proceedings 6368 (2006) 63680B/1-7
OPP06T. J. Ochalski D. Pierscinska K. Pierscinski M. Bugajski J. W. Tomm T. Grunske A. Kozlowska
Complementary thermo-reflectance and micro-Raman analysis of facet temperatures of diode lasers
Applied Physics Letters 89 (2006) 071104/1-3
URL, DOI or PDF-File
PPB06D. Pierscinska K. Pierscinski M. Bugajski J. W. Tomm
Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy
in: Proceedings of 12th International Workshop on Thermal Investigations of ICs, THERMINIC, B. Courtois, M. Rencz, C. Lasance, V. Szekely (Eds.), TIMA Editions, (2006) p. 7-11
URL, DOI or PDF-File
RTL06C. Ropers T.Q. Tien C. Lienau J.W. Tomm P. Brick N. Lindner B. Mayer M. Müller S. Tautz W. Schmid
Observation of deep level defects within the waveguide of red-emitting high-power diode lasers
Applied Physics Letters 88 (2006) 133513/1-3
URL, DOI or PDF-File
STG06F. Saas V. Talalaev U. Griebner J. W. Tomm M. Zorn A. Knigge M. Weyers
Optically pumped semiconductor disk laser with graded and step indices
Applied Physics Letters 89 (2006) 151120/1-3
URL, DOI or PDF-File
TCT06V.G. Talalaev G.E. Cirlin A.A. Tonkikh N.D. Zakharov P. Werner U. Gösele J.W. Tomm T. Elsaesser
Miniband-related 1.4 - 1.8 µm luminescence of Ge/Si quantum dot superlattices
Nanoscale Research Letters 1 (2006) 137-153
URL, DOI or PDF-File
TTS06V. G. Talalaev J. W. Tomm A. S. Sokolov I. V. Shtrom B. V. Novikov A. T. Winzer R. Goldhahn G. Gobsch N. D. Zakharov P. Werner U. Gösele G. E. Cirlin A. A. Tonkikh V. M. Ustinov G. G. Tarasov
Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
Journal of Applied Physics 100 (2006) 083704/1-7
URL, DOI or PDF-File
TWT06T. Q. Tien F. Weik J. W. Tomm B. Sumpf M. Zorn U. Zeimer G. Erbert
Thermal properties and degradation behavior of red-emitting high-power diode lasers
Applied Physics Letters 89 (2006) 181112/1-3
URL, DOI or PDF-File
TJi06J. W. Tomm J. Jimenez
Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques
Nanoscience and Technology Series (2006)
TTa06aJ. W. Tomm V. Talalaev
Carrier transfer in quantum-dot lasers
The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2
URL, DOI or PDF-File
TTa06bJ. W. Tomm V. G. Talalaev
Carrier dynamics in active-region materials for diode laser applications
SPIE Proceedings 6368 (2006) 63680N/1-6
TTC06J.W. Tomm T.Q. Tien D.T. Cassidy
Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
Applied Physics Letters 88 (2006) 133504/1-3
URL, DOI or PDF-File
TTO06J.W. Tomm T.Q. Tien M. Oudart J. Nagle M.L. Biermann
Strain relaxation and defect creation in diode laser bars
Materials Science in Semiconductor Processing 9 (2006) 215-219
URL, DOI or PDF-File
WST06F. Weik G. Steinmeyer J.W. Tomm R. Glatthaar U. Vetter J. Nurnus A. Lambrecht
A room-temperature continuous-wave operating mid-infrared light emitting device
Journal of Applied Physics 99 (2006) 114506/1-4
URL, DOI or PDF-File
ZWT06M. Ziegler F. Weik J. W. Tomm T. Elsaesser W. Nakwaski R. P. Sarzala D. Lorenzen J. Meusel A. Kozlowska
Transient thermal properties of high-power diode laser bars
Applied Physics Letters 89 (2006) 263506/1-3
URL, DOI or PDF-File
BTO05S. Bull J. W. Tomm M. Oudart J. Nagle C. Scholz K. Boucke I. Harrison E. C. Larkins
By-emitter degradation analysis of high-power laser bars
Journal of Applied Physics 98 (2005) 063101/1-4
URL, DOI or PDF-File
DGL05O. Drachenko J. Galibert J. Léotin J.W. Tomm M.P. Semtsiv M. Ziegler S. Dressler U. Müller W.T. Masselink
Electron-optical-phonon interaction in the In0.73Ga0.27As-AlAs intersubband laser
Applied Physics Letters 87 (2005) 072104/1-3
URL, DOI or PDF-File
KBB05T. Koprucki M. Baro U. Bandelow T.Q. Tien F. Weik J.W. Tomm M. Grau M.-C. Amann
Electronic structure and optoelectronic properties of strained InAsSb/GaSb multiple quantum-wells
Applied Physics Letters 87 (2005) 181911/1-3
URL, DOI or PDF-File
KLT05A. Kozlowska M. Latoszek J.W. Tomm F. Weik T. Elsaesser M. Zbroszczyk M. Bugajski B. Spellenberg M. Bassler
Analysis of thermal images from diode lasers: Temperature profiling and reliability screening
Applied Physics Letters 86 (2005) 203503/1-3
URL, DOI or PDF-File
KTW05A. Kozlowska J.W. Tomm P. Wawrzyniak A. Malag F. Weik M. Latoszek
Studies of the degradation mechanisms in high-power diode lasers using multi-channel micro-thermography
SPIE Proceedings 5958 (2005) 223-229
KWT05aA. Kozlowska P. Wawrzyniak J.W. Tomm F. Weik T. Elsaesser
Deep level emission from high-power diode laser bars detected by multispectral infrared imaging
Applied Physics Letters 87 (2005) 153503/1-3
URL, DOI or PDF-File
KWT05bA. Kozlowska F. Weik J.W. Tomm A. Malag M. Latoszek P. Wawrzyniak M. Teodorczyk L Dobrzanski M. Zbroszczyk M. Bugajski
Thermal properties of high-power diode lasers investigated by micro-thermography
SPIE Proceedings 5711 (2005) 158-165
URL, DOI or PDF-File
MWS05Yu. I. Mazur Z.M. Wang G.J. Salamo Min Xiao J.W. Tomm V. Talalaev H. Kissel
Interdot carrier transfer in asymmetric bi-layers of InAs/GaAs quantum dot structures
Applied Physics Letters 86 (2005) 063102/1-3
URL, DOI or PDF-File
MWT05Y.I. Mazur Z.M. Wang G.G. Tarasov G.J. Salamo J.W. Tomm V. Talalaev H. Kissel
Nonresonant tunneling carrier transfer in bi-layer asymmetric InAs/GaAs quantum dots
Physical Review B 71 (2005) 235313/1-8
URL, DOI or PDF-File
NVK05J. Nurnus U. Vetter J. Koenig R. Glatthaar A. Lambrecht F. Weik J.W. Tomm
Optically pumped mid infrared emitters built using surface structured PbSe epitaxial layers
SPIE Proceedings 5840 (2005) 212-220
PCM05B.S. Passmore Y.C. Chua M.O. Manasreh J.W. Tomm
Longitudinal modes in InAlGaAs/AlGaAs high-power laser diodes
Mater. Res. Soc. Symp. Proc. 829 (2005) 87-92
TTE05V. Talalaev J.W. Tomm T. Elsaesser U. Zeimer J. Fricke A. Knauer H. Kissel M. Weyers G.G. Tarasov J. Grenzer U. Pietsch
Carrier dynamics in laterally strain-modulated InGaAs-quantum wells
Applied Physics Letters 87 (2005) 262103/1-3
TGS05bQ.T. Tien A. Gerhardt S. Schwirzke-Schaaf J.W. Tomm H. Müntz J. Biesenbach M. Oudart J. Nagle M.L. Biermann
Relaxation of packaging-induced strains in AlGaAs-based high-power diode laser arrays
Applied Physics Letters 86 (2005) 101911/1-3
URL, DOI or PDF-File
TTO05Q.T. Tien J.W. Tomm M. Oudart J. Nagle
Mechanical strain and defect distributions in GaAs-based diode lasers monitored during operation
Applied Physics Letters 86 (2005) 111908/1-3
URL, DOI or PDF-File
TGS05aT.Q. Tien A. Gerhardt S. Schwirzke-Schaaf J.W. Tomm M. Pommiés M. Avella J. Jiménez M. Oudart J. Nagle
Screening of high-power diode laser bars by optical scanning
Applied Physics Letters 87 (2005) 211110/1-3
URL, DOI or PDF-File
TBP05J.W. Tomm M.L. Biermann B.S. Passmore M.O. Manasreh A. Gerhardt T.Q. Tien
Spectroscopic analysis of external stresses in semiconductor quantum-well materials
Mater. Res. Soc. Symp. Proc. 829 (2005) 233-242
TWG05J.W. Tomm F. Weik R. Glatthaar U. Vetter J. Nurnus A. Lambrecht B. Spellenberg M. Bassler M. Behringer J. Luft
A novel light-emitting structure for the 3-5 µm spectral range
SPIE Proceedings 5722 (2005) 319-326
URL, DOI or PDF-File
TWK05J.W. Tomm F. Weik A. Kozlowska M. Latoszek M. Bugajski M. Zbroszczykc
New characterization methods for semiconductor lasers
SPIE Proceedings 6013 (2005) 183-190
WKT05aP. Wawrzyniak A. Kozlowska J.W. Tomm A. Malag F. Weik M. Teodorczyk M. Latoszek
Screening techniques for high power GaAsP/AlGaAs/GaAs semiconductor lasers
SPIE Proceedings 5958 (2005) 59582K/1-7
WTG04aF. Weik J.W. Tomm R. Glatthaar U. Vetter D. Szewczy J. Nurnus A. Lambrecht L. Mechold B. Spellenberg M. Bassler
Mid infrared luminescence imaging and its application to the optimization of light emitting diodes
Applied Physics Letters 86 (2005) 041106/1-3
URL, DOI or PDF-File
BDP04M.L. Biermann St. Duran K. Peterson A. Gerhardt J.W. Tomm W. Trzeciakowski A. Bercha
Spectroscopic method of strain analysis in semiconductor quantum-well devices
Journal of Applied Physics 96 (2004) 4056-4065
URL, DOI or PDF-File
GTO04A. Gerhardt J.W. Tomm S. Schwirzke-Schaaf J. Nagle M. Oudart Y. Sainte-Marie
Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping
The European Physical Journal - Applied Physics 27 (2004) 451-454
GWT04A. Gerhardt F. Weik T.Q. Tran J.W. Tomm T. Elsaesser J. Biesenbach H. Müntz G. Seibold M.L. Biermann
Device deformation during low-frequency pulsed operation of high-power diode bars
Applied Physics Letters 84 (2004) 3525-3527
URL, DOI or PDF-File
GNV04R. Glatthaar J. Nurnus U. Vetter D. Szewczyk A. Lambrecht F. Weik J.W. Tomm
Mid-infrared light sources at room temperature based on lead chalcogenides
SPIE Proceedings 5459 (2004) 54-60
URL, DOI or PDF-File
HMT04A. Hagen G. Moos V. Talalaev T. Hertel
Electronic structure and dynamics of optically excited single-wall carbon nanotubes
Applied Physics A 78 (2004) 1137-1145
URL, DOI or PDF-File
HST04F. Hatami L. Schrottke J.W. Tomm V. Talalaev C. Kristukat A.R. Goni W.T. Masselink
Optical properties and carrier dynamics of InP quantum dots embedded in GaP
SPIE Proceedings 5352 (2004) 77-89
URL, DOI or PDF-File
TTZ04aV.G. Talalaev J.W. Tomm N.D. Zakharov P. Werner B.V. Novikov G.É. Cirlin Yu. B. Samsonenko A.A. Tonkikh V.A. Egorov N.K. Polyakov V.M. Unstinov
Spectroscopy of exciton states of InAs quantum molecules
Semiconductors 38 (2004) 696-701
URL, DOI or PDF-File
TTZ04bV.G. Talalaev J.W. Tomm N.D. Zakharov P. Werner B.V. Novikov A.A. Tonkikh
Transient spectroscopy of InAs quantum dot molecules
Applied Physics Letters 85 (2004) 284-286
URL, DOI or PDF-File
TGB04J. W. Tomm A. Gerhard M.L. Biermann J.P. Holland
Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices
The European Physical Journal - Applied Physics 27 (2004) 461-464
TSG04J. W. Tomm V. Strelchuk A. Gerhard U. Zeimer M. Zorn H. Kissel M. Weyers J. Jiménez
Properties of As+-implanted and annealed GaAs and InGaAs quantum-wells: structural and band-structure modifications
Journal of Applied Physics 95 (2004) 1122-1126
URL, DOI or PDF-File
TWG04J.W. Tomm F. Weik A. Gerhardt T.Q. Tran J. Biesenbach H. Müntz G. Seibold
Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays
SPIE Proceedings 5336 (2004) 125-131
URL, DOI or PDF-File
WTG04bF. Weik J.W. Tomm R. Glatthaar U. Vetter D. Szewczyk J. Nurnus A. Lambrecht M. Grau R. Meyer M.C. Amann B. Spellenberg M. Bassler
Materials and structural design of a mid-infrared light-emitting device
SPIE Proceedings 5366 (2004) 149-157
URL, DOI or PDF-File
HMS03F. Hatami W.T. Masselink L. Schrottke J.W. Tomm V. Talalaev C. Kristukat A.R. Goni
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
Physical Review B 67 (2003) 085306/1-8
URL, DOI or PDF-File
MDP03G. Mussler L. Däweritz K.H. Ploog J.W. Tomm V. Talalaev
Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)
Applied Physics Letters 83 (2003) 1343-1345
URL, DOI or PDF-File
RRK03F. Rinner J. Rogg M.T. Kelemen M. Mikulla G. Weimann J.W. Tomm E. Thamm R. Poprawe
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
Journal of Applied Physics 93 (2003) 1848-1850
URL, DOI or PDF-File
TMT03J.W. Tomm T. Elsaesser Yu I. Mazur H. Kissel G.G. Tarasov Z.Ya. Zhuchenko W.T. Masselink
Transient luminescence of dense InAs/GaAs quantum dot arrays
Physical Review B 67 (2003) 045326/1-8
URL, DOI or PDF-File
TGM03bJ. W. Tomm A. Gerhardt R. Müller M.L. Biermann J.P. Holland D. Lorenzen E. Kaulfersch
Quantitative strain analysis in AlGaAs-based devices
Applied Physics Letters 82 (2003) 4193-4195
URL, DOI or PDF-File
TGM03aJ.W. Tomm A. Gerhardt R. Müller V. Malyarchuk Y. Sainte-Marie P. Galtier J. Nagle J.-P. Landesman
Spatially-resolved spectroscopic strain measurements on high-power laser diode bars
Journal of Applied Physics 93 (2003) 1354-1362
URL, DOI or PDF-File
TRT03J.W. Tomm F. Rinner E. Thamm C. Ribbat R. Sellin D. Bimberg
Analysis of heat flows and their impact on the reliability of high-power diode lasers
SPIE Proceedings 4993 (2003) 91-99
DST02F. Dörfel S. Nerreter J.W. Tomm R. Grunwald R. Kunkel J. Luft
Microreflectance inspection of diode laser front facets
SPIE Proceedings 4648 (2002) 48-54
GTM02A. Gerhardt J.W. Tomm R. Müller A. Bärwolff D. Lorenzen J. Donecker
Measurement of mounting-induced strain and defects in high-power laser diodes using Fourier-transform photo-current spectroscopy
Materials Science and Engineering B 91-92 (2002) 476-480
URL, DOI or PDF-File
MGR02A. Maaßdorf S. Gramlich E. Richter F. Brunner M. Weyers G. Tränkle J.W. Tomm Y.I. Mazur D. Nickel V. Malyarchuk T. Guenther C. Lienau A. Baerwolff T. Elsaesser
Minority-carrier kinetics in heavily doped GaAs: C studied by transient photoluminescence
Journal of Applied Physics 91 (2002) 5072-78
URL, DOI or PDF-File
MTL02V. Malyarchuk J.W. Tomm Ch. Lienau
Uniformity tests of individual segments of interband cascade diode laser nanostacks
Journal of Applied Physics 92 (2002) 2729-2733
URL, DOI or PDF-File
MTT02bV. Malyarchuk J.W. Tomm V. Talalaev Ch. Lienau F. Rinner M. Baeumler
Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Applied Physics Letters 81 (2002) 346-348
URL, DOI or PDF-File
MTT02aY.I. Mazur J.W. Tomm G.G. Tarasov H. Kissel C. Walther Z.Ya. Zhuchenko W.T. Masselink
Interdot energy transfer in a system of coupled InAs/GaAs quantum dots
Physica E: Low-dimensional Systems and Nanostructures 13 (2002) 255-258
TGE02J.W. Tomm A. Gerhardt T. Elsaesser D. Lorenzen P. Hennig
Simultaneous quantification of strain and defects in high-power diode laser devices
Applied Physics Letters 81 (2002) 3269-3271
URL, DOI or PDF-File
TGL02J.W. Tomm A. Gerhardt D. Lorenzen P. Henning H. Roehle
Diode laser testing by taking advantage of its photoelectric properties
SPIE Proceedings 4648 (2002) 9-21
TMM02J.W. Tomm A. Maaßdorf Y.I. Mazur S. Gramlich E. Richter F. Brunner M. Weyers G. Tränkle V. Malyarchuk T. Günther Ch. Lienau
The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy
Materials Science and Engineering B 91-92 (2002) 25-28
URL, DOI or PDF-File
KBN01H. Kuenzel K. Biermann D. Nickel T. Elsaesser
Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Journal of Crystal Growth 227-228 (2001) 284-288
URL, DOI or PDF-File
MTG01V. Malyarchuck J.W. Tomm T. Günther R. Müller R. Kunkel C. Lienau J. Luft
Large optical cavity waveguides for high-power diode laser applications
SPIE Proceedings 4287 (2001) 111-7
MTP01Yu. I. Mazur J. W. Tomm V. Petrov G. G. Tarasov H. Kissel C. Walther Z. Ya. Zhuchenko W. T. Masselink
Staircase-like spectral dependence of ground-state luminescence time-constants in high-density InAs/GaAs quantum dots
Applied Physics Letters 78 (2001) 3214-16
URL, DOI or PDF-File
SDE01A.S. Shkolnik E.B. Dogonkin V.P. Evtikhiev E.Yu. Kotelnikov I.V. Kudryashof V.G. Talalaev B.V. Novikov J.W. Tomm G. Gobsch
Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
Nanotechnology 12 (2001) 512-514
URL, DOI or PDF-File
TNG01V.G. Talalaev B.V. Novikov G. Gobsch R. Goldhahn N. Stein J. W. Tomm A. Maasdorf G.E. Cirlin V.N. Petrov V.M. Ustinov
Radiative recombination features of metastable quantum dot array
Physica status solidi (b) 224 (2001) 101-105
URL, DOI or PDF-File
BTM00A. Baerwolff J. W. Tomm R. Müller S. Weiß M. Hutter H. Oppermann H. Reichl
Spectroscopic measurement of mounting-induced strain in optoelectronic devices
IEEE Transactions on Advanced Packaging 23 (2000) 170-175
BDG00W. Braun P. Dowd C.-Z. Guo S.-L. Chen C. M. Ryu U. Koelle S. R. Johnson Y.-H. Zhang J. W. Tomm T. Elsaesser D. J. Smith
Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100 nm-1550 nm range
Journal of Applied Physics 88 (2000) 3004-3014
URL, DOI or PDF-File
BRB00F. Brunner E. Richter T. Bergunde I. Rechenberg A. Bhattacharya A. Maassdorf J. W. Tomm P. Kurpas M. Achouche J. Würfel M. Weyers
Effect of high-temperature annealing on GalnP/GaAs HBT structures grown by LP-MOVPE
Journal of Electronic Materials 29 (2000) 205-209
URL, DOI or PDF-File
EBS00G. Erbert A. Bärwolff J. Sebastian J.W. Tomm
High-power broad-area diode lasers and laser bars
High-power diode lasers, Fundamentals, Technology, Applications, R. Diehl (Ed.), Springer Verlag, Berlin 78 (2000) 173-223
HAT00K. H. Herrmann Hessa Al-Otaibi J. W. Tomm
Photocurrent spectroscopy of QW GRIN laser structures
Materials Science and Engineering B 74 (2000) 61-65
URL, DOI or PDF-File
KDC00A. Kummrow J. Dreyer C. Chudoba J. Stenger E. T. J. Nibbering T. Elsaesser
Ultrafast charge transfer studied by femtosecond IR-spectroscopy and ab initio calculations
Journal of the Chinese Chemical Society 47 (2000) 721-8
PBV00R. Puchert A. Bärwolff M. Voss U. Menzel J.W. Tomm J. Luft
Transient thermal behavior of high power diode laser arrays
IEEE Transactions on Components Packing and Manufacturing Technics Part B 23 (2000) 95-100
TMZ00G. Tarasov Yu. I. Mazur Z.Ya.Zhuchenko A. Maaßdorf D. Nickel J.W. Tomm H. Kissel C. Walther W.T. Masselink
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
Journal of Applied Physics 88 (2000) 7162-7170
TBa00J.W. Tomm A. Bärwolff
Aging Properties of 840 nm ion-implanted VCSEL's monitored by analysis of their photoelectric properties
SPIE Proceedings 3946 (2000) 30-5
TBE00J. W. Tomm A. Bärwolff T. Elsaesser J. Luft
Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers
Applied Physics Letters 77 (2000) 747-749
URL, DOI or PDF-File
TGL00J. W. Tomm T. Günther Ch. Lienau A. Gerhardt J. Donecker
Near-field photocurrent spectroscopy in diode laser devices
J. Crystal Growth 210 (2000) 296-302
URL, DOI or PDF-File
TTB00J. W. Tomm E. Thamm A. Baerwolff T. Elsaesser J. Luft M. Baeumler K. S. Mueller W. Jantz I. Rechenberg G. Erbert
Facet degradation of high-power diode laser arrays
Applied Physics A 70 (2000) 377-381
URL, DOI or PDF-File
TUQ00J.W. Tomm B. Ullrich X.G. Qiu A.Ohtomo M. Kawasaki H. Koinuma Y. Segawa
Optical and photoelectrical properties of oriented ZnO films
Journal of Applied Physics 87 (2000) 1844-8
URL, DOI or PDF-File
UTD00B. Ullrich J. W. Tomm N. M. Dushkina Y. Tomm H. Sakai Y. Segawa
Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition
Solid State Communications 116 (2000) 33-5
URL, DOI or PDF-File
HTo99K.H. Herrmann J.W. Tomm
Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy
SPIE Proceedings 3890 (1999) 2-9
HTA99aK.H. Herrmann J.W. Tomm H. Al-Otaibi
Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index structures
Semic. Sci. & Technol. 14 (1999) 293-297
URL, DOI or PDF-File
HTA99bK.H. Herrmann J.W. Tomm H. Al-Otaibi
Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures
SPIE Proceedings 3890 (1999) 70-74
TML99G. G. Tarasov Yu I Mazur M.P. Lisitsa S.R. Lavoric A.S. Rakitin J.W. Tomm A. P. Litvinchuk
Far-infrared reflectivity study of lattice dynamics of narrow-gap HgCdMnTe semiconductors
Semic. Sci. & Technol. 14 (1999) 187-197
URL, DOI or PDF-File
TRM99G.G. Tarasov A. Rakitin Yu. I. Mazur J.W. Tomm W.T. Masselink
Phonon-assisted magnetopolaron effect in diluted magnetic semiconductors
Physical Review B 59 (1999) 2731-2736
URL, DOI or PDF-File
Tom99Jens W. Tomm
Probing diode lasers with light - photocurrent reveals information on defects and strain in optoelectronic devices
LEOS Letters 13 (1999) 20-22
TML99J.W. Tomm Y.I. Mazur M.P. Lisitsa G.G. Tarasov F. Fuchs
Photoluminescence excitation due to hot excitons in narrow-gap Hg1-x-yCdxMnyTe
Semic. Sci. & Technol. 14 (1999) 148-155
URL, DOI or PDF-File
TMB99aJ.W. Tomm R. Müller A. Bärwolff T. Elsaesser A. Gerhardt J. Donecker D. Lorenzen F.X. Daiminger S. Weiß M. Hutter E. Kaulfersch H. Reichl
Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes
Journal of Applied Physics 86 (1999) 1196-1201
TMB99bJ.W. Tomm R. Müller A. Bärwolff M. Neuner T. Elsaesser D. Lorenzen F.X. Daiminger A. Gerhardt J. Donecker
Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays
Proc. SPIE 3626 (1999) 138-147
HKM98W. Hoerstel W. Kraak W.T. Masselink Y.I. Mazur G.G. Tarasov E.V. Kurmenko J.W. Tomm
Spin-flip effects in the magnetoluminescence and magneto-resistance of semimagnetic narrow-gap Hg1-x-yCdxMnyTe
Physical Review B 58 (1998) 4531-4537
URL, DOI or PDF-File
Men98U. Menzel
Self consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers
Semic. Sci. & Technol. 13 (1998) 265-276
URL, DOI or PDF-File
MPB98U. Menzel R. Puchert A. Bärwolff A. Lau
Facet heating and axial temperature profiles in high power AlGaAs/GaAs laser diodes (invited paper)
Microelectronics and Reliability 38 (1998) 821-825
MKl98R. Müller A. Klehr
Polarization dynamics of strained 1.3 mm InGaAsP/InP lasers: Spectral properties and lateral near field behaviour
Quant. and Semiclassical Opt. 10 (1998) 37-50
URL, DOI or PDF-File
PTJ98R. Puchert J. W. Tomm A. Jaeger A. Bärwolff J. Luft W. Späth
Emitter failure and thermal facet load in high-power laser diode arrays
Applied Physics A 66 (1998) 483 - 486
URL, DOI or PDF-File
TLM98G. G. Tarasov S. R. Lavoric Yu. I. Mazur J. W. Tomm
FIR phonon spectroscopy of quanternary Hg1-x-yCdx MnyTe
J. Crystal Growth 184/185 (1998) 1214 -1218
URL, DOI or PDF-File
TMR98G.G. Tarasov Yu. I. Mazur A. Rakitin M.P. Lisitsa S.R. Lavoric J.W. Tomm A.. Litvinchuk
Spectroscopy of phonon states in narrow-gap HgCdMnTe(Se) semiconductors
Asian J. of Spectrosc. 2 (1998) 1-29
TBJ98J.W. Tomm A. Bärwolff A. Jaeger T. Elsaesser J. Bollmann W.T. Masselink A. Gerhardt J. Donecker
Deep level spectroscopy of high-power laser diode arrays
Journal of Applied Physics 84 (1998) 1325-1332
URL, DOI or PDF-File
TBL98Tomm, J.W. Bärwolff, A. Lienau, Ch. Richter, A. Jaeger, A. Donecker, J. Gerhardt, A. Daiminger, F.X. Heinemann, S.
Monitoring of the aging of high-power laser diode arrays
SPIE -Proc. 3359 (1998) 2-13
TBP98J.W. Tomm A. Bärwolff R. Puchert A. Jaeger T. Elsaesser
Optical probes as tools for the investigation of aging properties of high-power laser diode arrays
SPIE Proceedings 3244 (1998) 576-584
TMB98J.W. Tomm R. Müller A. Bärwolff T. Elsaesser D. Lorenzen F.X. Daiminger A. Gerhardt J. Donecker
Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices
Applied Physics Letters 73 (1998) 3908-3910
URL, DOI or PDF-File
Frau Margret Lehmann
mlehmann@mbi-berlin.de
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