| STN10 | M. B. Smirnov, V. G. Talalaev, B. V. Nowikov, S. V. Sarangov, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm and G. E. Cirlin |
| Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing |
| phys. stat. sol. b 247 (2010) 347-352 |
| URL, DOI or PDF-File |
| JMP09 | A. Jasik, J. Muszalski, K. Pierscinski, M. Bugajski, V. G. Talalaev and M. Kosmala |
| Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation |
| J. Appl. Phys. 106 (2009) 053101/1-8 |
| URL, DOI or PDF-File |
| LZM09 | J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mcinerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski and R. P. Sarzala |
| Microthermography of diode lasers: The impact of light propagation on image formation |
| J. Appl. Phys. 105 (2009) 014502/1-6 |
| URL, DOI or PDF-File |
| MZL09 | J. Mukherjee, M. Ziegler, J. LeClech, J. W. Tomm, B. Corbett, J. G. Mcinerney, J. P. Reithmaier, S. Deubert and A. Forchel |
| Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis |
| SPIE Proc. 7230 (2009) 72300W/1-7 |
| URL, DOI or PDF-File |
| PTB09 | B. Piechal, J. W. Tomm, A. Bercha, W. Trzeciakowski, M. Reufer and A. Gomez-Iglesias |
| Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure |
| Appl. Phys. A 97 (2009) 179-184 |
| URL, DOI or PDF-File |
| TZO09 | J. W. Tomm, M. Ziegler, M. Oudart, J. Nagle and J. Jiménez |
| Gradual degradation of GaAs-based quantum well lasers, creation of defects, and generation of compressive strain |
| phys. stat. sol. a 206 (2009) 1912-1915 |
| URL, DOI or PDF-File |
| TZT09 | J. W. Tomm, M. Ziegler, V. Talalaev, C. Matthiesen, T. Elsaesser, M. B. Sanayeh, P. Brick and M. Reufer |
| New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers |
| SPIE Proc. 7230 (2009) 72300V/1-9 |
| URL, DOI or PDF-File |
| ZTR09 | M. Ziegler, J. W. Tomm, D. Reeber, T. Elsaesser, U. Zeimer, H. E. Larsen, P. M. Petersen and P. E. Andersen |
| Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation |
| Appl. Phys. Lett. 94 (2009) 191101/1-3 |
| URL, DOI or PDF-File |
| BTL08 | S. Bull, J. W. Tomm and E. C. Larkins |
| Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies |
| J. Mater. Sci.: Mater. Electron. 19 (2008) S145-S149 |
| URL, DOI or PDF-File |
| PKP08 | D. Pierscinska, A. Kozlowska, K. Pierscinski, M. Bugajski, J. W. Tomm, M. Ziegler and F. Weik |
| Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance |
| J. Mater. Sci.: Mater. Electron. 19 (2008) S150-S154 |
| URL, DOI or PDF-File |
| SBS08a | M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, S. Schwirzke-Schaaf, J. W. Tomm, A. Danilewsky and G. Bacher |
| Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage |
| J. Mater. Sci.: Mater. Electron. 19 (2008) S155-S159 |
| URL, DOI or PDF-File |
| SBS08b | M. B. Sanayeh, P. Brick, W. Schmidt, B. Mayer, M. Müller, M. Reufer, K. Streubel, M. Ziegler, J. W. Tomm and G. Bacher |
| The physics of catastrophic optical damage in high-power AlGaInP laser diodes |
| SPIE Proc. 6997 (2008) 699703 (12 pages) |
| URL, DOI or PDF-File |
| TCT08 | V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm and T. Elsaesser |
| Miniband-related 1.4-1.8µm luminescence of Ge/Si quantum dot superlattices |
| in Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics 324-345, M. Henini ed. (Elsevier Science, 2008) |
| URL, DOI or PDF-File |
| TTZ08 | V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, U. Gösele, B. V. Novikov, A. S. Sokolov, Y. B. Samsonenko, V. A. Egorov and G. E. Cirlin |
| Transient carrier transfer in tunnel injection structures |
| Appl. Phys. Lett. 93 (2008) 031105/1-3 |
| URL, DOI or PDF-File |
| TZT08 | J. W. Tomm, M. Ziegler, T. Q. Tien, F. Weik, P. Hennig, J. Meusel, H. Kissel, G. Seibold, J. Biesenbach, G. Groenninger, G. Herrmann and U. Strauß |
| Screening of high power laser diode bars in terms of stresses and thermal profiles |
| SPIE Proc. 6876 (2008) 687619 (7 pages) |
| URL, DOI or PDF-File |
| WSB08 | M. Wienold, M. P. Semtsiv, I. Bayrakli, W. T. Masselink, M. Ziegler, K. Kennedy and R. Hogg |
| Optical and thermal characteristics of narrow-ridge quantum-cascade lasers |
| J. Appl. Phys. 103 (2008) 083113/1-5 |
| URL, DOI or PDF-File |
| ZPF08 | M. Ziegler, R. Pomraenke, M. Feiger, J. W. Tomm, P. Vasa, C. Lienau, M. B. Sanayeh, A. Gomez-Iglesias, M. Reufer, F. Bugge and G. Erbert |
| Infrared emission from the substrate of GaAs-based semiconductor lasers |
| Appl. Phys. Lett. 93 (2008) 041101/1-3 |
| URL, DOI or PDF-File |
| ZTT08 | M. Ziegler, V. Talalaev, J. W. Tomm, T. Elsaesser, P. Ressel, B. Sumpf and G. Erbert |
| Surface recombination and facet heating in high-power diode lasers |
| Appl. Phys. Lett. 92 (2008) 203506/1-3 |
| URL, DOI or PDF-File |
| ZTE08b | M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski and R. P. Sarzala |
| Visualization of heat flows in high-power diode lasers by lock-in thermography |
| Appl. Phys. Lett. 92 (2008) 103513/1-3 |
| URL, DOI or PDF-File |
| ZTE08a | M. Ziegler, J. W. Tomm, T. Elsaesser, C. Matthiesen, M. B. Sanayeh and P. Brick |
| Real-time thermal imaging of catastrophic optical damage in red-emitting high-power diode lasers |
| Appl. Phys. Lett. 92 (2008) 103514/1-3 |
| URL, DOI or PDF-File |
| ZTE08c | M. Ziegler, J. W. Tomm, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel and J. Biesenbach |
| Cavity-enhanced thermal emission from semiconductor lasers |
| J. Appl. Phys. 103 (2008) 104508/1-11 |
| URL, DOI or PDF-File |
| ZTW08 | M. Ziegler, J. W. Tomm, F. Weik, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, G. Seibold and J. Biesenbach |
| Accurate determination of absolute temperatures of GaAs based high-power diode lasers |
| SPIE Proc. 6876 (2008) 68761A (8pages) |
| URL, DOI or PDF-File |
| BCT07 | M. L. Biermann, D. T. Cassidy, T. Q. Tien and J. W. Tomm |
| Processing-induced strains at solder interfaces in extended semiconductor structures |
| J. Appl. Phys. 101 (2007) 114512/1-5 |
| URL, DOI or PDF-File |
| BTo07 | K. Boucke and J. W. Tomm |
| Chip characterization methods and measurements |
| in High-Power Diode-Lasers: Technology and Applications 34-47, F. Bachmann, P. Loosen, and R. Poprawe eds. (Springer, Heidelberg, 2007) |
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| PPB07 | D. Pierscinska, K. Pierscinski, M. Bugajski and J. W. Tomm |
| Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy |
| phys. stat. sol. a 204 (2007) 422-429 |
| URL, DOI or PDF-File |
| SBS07 | M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Müller, M. Reufer, K. Streubel, J. W. Tomm and G. Bacher |
| Temperature-power dependence of catastrophic optical damage in AlGalnP laser diodes |
| Appl. Phys. Lett. 91 (2007) 041115/1-3 |
| URL, DOI or PDF-File |
| TNS07 | V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm, N. D. Zakharov, P. Werner, G. E. Cirlin and A. A. Tonkikh |
| Resonances related to an array of InAs quantum dots and controlled by an external electric field |
| Semiconductors 41 (2007) 197-204 (Russian original in: Fizika i Tekhnika Poluprovodnikov, 41 (2007) 203-210) |
| URL, DOI or PDF-File |
| WDW07 | D. Wu, A. B. Descalzo, F. Weik, F. Emmerling, Z. Shen, X.-Z. You and K. Rurack |
| A core-modified rubyrin with meso-aryl substituents and phenanthrene-fused pyrrole rings: A highly conjugated near-infrared Dye and Hg2+ probe |
| Angew. Chem. Int. Edit. 47 (2007) 193-197 |
| URL, DOI or PDF-File |
| ZTS07 | M. Ziegler, T. Q. Tien, S. Schwirzke-Schaaf, J. W. Tomm, B. Sumpf, G. Erbert, M. Oudart and J. Nagle |
| Gradual degradation of red-emitting high-power diode laser bars |
| Appl. Phys. Lett. 90 (2007) 171113/1-3 |
| URL, DOI or PDF-File |
| KTM06 | A. Kozlowska, J. W. Tomm and A. Malag |
| Microthermographic investigations of aging processes in diode lasers |
| SPIE Proc. 6368 (2006) 63680B/1-7 |
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| KTW06 | A. Kozlowska, J. W. Tomm, P. Wawrzyniak and F. Weik |
| Micro-thermography enables rapid inspection of defects in diode lasers |
| The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2 |
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| KWM06 | A. Kozlowska, P. Wawrzyniak, A. Malag, M. Teodorczyk, J. W. Tomm and F. Weik |
| Reliability screening of diode lasers by multispectral infrared imaging |
| J. Appl. Phys. 99 (2006) 053101/1-6 |
| URL, DOI or PDF-File |
| KTT06 | M. Kreissl, T. Q. Tien, J. W. Tomm, D. Lorenzen, A. Kozlowska, M. Latoszek, M. Oudart and J. Nagle |
| Spatially-resolved and temperature dependent thermal tuning rates of high-power diode laser arrays |
| Appl. Phys. Lett. 88 (2006) 133510/1-3 |
| URL, DOI or PDF-File |
| LBH06 | A. Lambrecht, M. Braun, S. Hartwig, J. Nurnus, J. Wöllenstein, F. Weik and J. W. Tomm |
| New infrared sources for breath analysis |
| SPIE Proc. 6093 (2006) 60930B/1-9 |
| URL, DOI or PDF-File |
| MCW06 | D. Masanotti, F. Causa, F. Weik, M. Ziegler and J. W. Tomm |
| Analysis of mechanical strain and temperature profiling in high-brightness, parabolic bow-tie laser arrays |
| SPIE Proc. 6368 (2006) 63680B/1-7 |
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| OPP06 | T. J. Ochalski, D. Pierscinska, K. Pierscinski, M. Bugajski, J. W. Tomm, T. Grunske and A. Kozlowska |
| Complementary thermo-reflectance and micro-Raman analysis of facet temperatures of diode lasers |
| Appl. Phys. Lett. 89 (2006) 071104/1-3 |
| URL, DOI or PDF-File |
| PPB06 | D. Pierscinska, K. Pierscinski, M. Bugajski and J. W. Tomm |
| Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy |
| in Proceedings of 12th International Workshop on Thermal Investigations of ICs, THERMINIC 7-11, B. Courtois, M. Rencz, C. Lasance et al. eds. (TIMA Editions, 2006) |
| URL, DOI or PDF-File |
| RTL06 | C. Ropers, T. Q. Tien, C. Lienau, J. W. Tomm, P. Brick, N. Lindner, B. Mayer, M. Müller, S. Tautz and W. Schmid |
| Observation of deep level defects within the waveguide of red-emitting high-power diode lasers |
| Appl. Phys. Lett. 88 (2006) 133513/1-3 |
| URL, DOI or PDF-File |
| STG06 | F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, A. Knigge and M. Weyers |
| Optically pumped semiconductor disk laser with graded and step indices |
| Appl. Phys. Lett. 89 (2006) 151120/1-3 |
| URL, DOI or PDF-File |
| TCT06 | V. G. Talalaev, G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm and T. Elsaesser |
| Miniband-related 1.4 - 1.8 µm luminescence of Ge/Si quantum dot superlattices |
| Nanoscale Research Letters 1 (2006) 137-153 |
| URL, DOI or PDF-File |
| TTS06 | V. G. Talalaev, J. W. Tomm, A. S. Sokolov, I. V. Shtrom, B. V. Novikov, A. T. Winzer, R. Goldhahn, G. Gobsch, N. D. Zakharov, P. Werner, U. Gösele, G. E. Cirlin, A. A. Tonkikh, V. M. Ustinov and G. G. Tarasov |
| Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field |
| J. Appl. Phys. 100 (2006) 083704/1-7 |
| URL, DOI or PDF-File |
| TWT06 | T. Q. Tien, F. Weik, J. W. Tomm, B. Sumpf, M. Zorn, U. Zeimer and G. Erbert |
| Thermal properties and degradation behavior of red-emitting high-power diode lasers |
| Appl. Phys. Lett. 89 (2006) 181112/1-3 |
| URL, DOI or PDF-File |
| TJi06 | J. W. Tomm and J. Jimenez |
| Quantum-Well Laser Array Packaging: Nanoscale Packaging Techniques |
| Nanoscience and Technology Series (2006), (McGraw-Hill, New York, USA, 2006), |
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| TTa06a | J. W. Tomm and V. Talalaev |
| Carrier transfer in quantum-dot lasers |
| The International Society for Optical Engineering - SPIE Newsroom (2006) 1-2 |
| URL, DOI or PDF-File |
| TTa06b | J. W. Tomm and V. G. Talalaev |
| Carrier dynamics in active-region materials for diode laser applications |
| SPIE Proc. 6368 (2006) 63680N/1-6 |
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| TTC06 | J. W. Tomm, T. Q. Tien and D. T. Cassidy |
| Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy |
| Appl. Phys. Lett. 88 (2006) 133504/1-3 |
| URL, DOI or PDF-File |
| TTO06 | J. W. Tomm, T. Q. Tien, M. Oudart, J. Nagle and M. L. Biermann |
| Strain relaxation and defect creation in diode laser bars |
| Materials Science in Semiconductor Processing 9 (2006) 215-219 |
| URL, DOI or PDF-File |
| WST06 | F. Weik, G. Steinmeyer, J. W. Tomm, R. Glatthaar, U. Vetter, J. Nurnus and A. Lambrecht |
| A room-temperature continuous-wave operating mid-infrared light emitting device |
| J. Appl. Phys. 99 (2006) 114506/1-4 |
| URL, DOI or PDF-File |
| ZWT06 | M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. P. Sarzala, D. Lorenzen, J. Meusel and A. Kozlowska |
| Transient thermal properties of high-power diode laser bars |
| Appl. Phys. Lett. 89 (2006) 263506/1-3 |
| URL, DOI or PDF-File |
| BTO05 | S. Bull, J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison and E. C. Larkins |
| By-emitter degradation analysis of high-power laser bars |
| J. Appl. Phys. 98 (2005) 063101/1-4 |
| URL, DOI or PDF-File |
| DGL05 | O. Drachenko, J. Galibert, J. Léotin, J. W. Tomm, M. P. Semtsiv, M. Ziegler, S. Dressler, U. Müller and W. T. Masselink |
| Electron-optical-phonon interaction in the In0.73Ga0.27As-AlAs intersubband laser |
| Appl. Phys. Lett. 87 (2005) 072104/1-3 |
| URL, DOI or PDF-File |
| KBB05 | T. Koprucki, M. Baro, U. Bandelow, T. Q. Tien, F. Weik, J. W. Tomm, M. Grau and M.-C. Amann |
| Electronic structure and optoelectronic properties of strained InAsSb/GaSb multiple quantum-wells |
| Appl. Phys. Lett. 87 (2005) 181911/1-3 |
| URL, DOI or PDF-File |
| KLT05 | A. Kozlowska, M. Latoszek, J. W. Tomm, F. Weik, T. Elsaesser, M. Zbroszczyk, M. Bugajski, B. Spellenberg and M. Bassler |
| Analysis of thermal images from diode lasers: Temperature profiling and reliability screening |
| Appl. Phys. Lett. 86 (2005) 203503/1-3 |
| URL, DOI or PDF-File |
| KTW05 | A. Kozlowska, J. W. Tomm, P. Wawrzyniak, A. Malag, F. Weik and M. Latoszek |
| Studies of the degradation mechanisms in high-power diode lasers using multi-channel micro-thermography |
| SPIE Proc. 5958 (2005) 223-229 |
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| KWT05a | A. Kozlowska, P. Wawrzyniak, J. W. Tomm, F. Weik and T. Elsaesser |
| Deep level emission from high-power diode laser bars detected by multispectral infrared imaging |
| Appl. Phys. Lett. 87 (2005) 153503/1-3 |
| URL, DOI or PDF-File |
| KWT05b | A. Kozlowska, F. Weik, J. W. Tomm, A. Malag, M. Latoszek, P. Wawrzyniak, M. Teodorczyk, L. Dobrzanski, M. Zbroszczyk and M. Bugajski |
| Thermal properties of high-power diode lasers investigated by micro-thermography |
| SPIE Proc. 5711 (2005) 158-165 |
| URL, DOI or PDF-File |
| MWS05 | Y. I. Mazur, Z. M. Wang, G. J. Salamo, M. Xiao, J. W. Tomm, V. Talalaev and H. Kissel |
| Interdot carrier transfer in asymmetric bi-layers of InAs/GaAs quantum dot structures |
| Appl. Phys. Lett. 86 (2005) 063102/1-3 |
| URL, DOI or PDF-File |
| MWT05 | Y. I. Mazur, Z. M. Wang, G. G. Tarasov, G. J. Salamo, J. W. Tomm, V. Talalaev and H. Kissel |
| Nonresonant tunneling carrier transfer in bi-layer asymmetric InAs/GaAs quantum dots |
| Phys. Rev. B 71 (2005) 235313/1-8 |
| URL, DOI or PDF-File |
| NVK05 | J. Nurnus, U. Vetter, J. Koenig, R. Glatthaar, A. Lambrecht, F. Weik and J. W. Tomm |
| Optically pumped mid infrared emitters built using surface structured PbSe epitaxial layers |
| SPIE Proc. 5840 (2005) 212-220 |
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| PCM05 | B. S. Passmore, Y. C. Chua, M. O. Manasreh and J. W. Tomm |
| Longitudinal modes in InAlGaAs/AlGaAs high-power laser diodes |
| Mater. Res. Soc. Symp. Proc. 829 (2005) 87-92 |
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| TTE05 | V. Talalaev, J. W. Tomm, T. Elsaesser, U. Zeimer, J. Fricke, A. Knauer, H. Kissel, M. Weyers, G. G. Tarasov, J. Grenzer and U. Pietsch |
| Carrier dynamics in laterally strain-modulated InGaAs-quantum wells |
| Appl. Phys. Lett. 87 (2005) 262103/1-3 |
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| TGS05b | Q. T. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J. W. Tomm, H. Müntz, J. Biesenbach, M. Oudart, J. Nagle and M. L. Biermann |
| Relaxation of packaging-induced strains in AlGaAs-based high-power diode laser arrays |
| Appl. Phys. Lett. 86 (2005) 101911/1-3 |
| URL, DOI or PDF-File |
| TTO05 | Q. T. Tien, J. W. Tomm, M. Oudart and J. Nagle |
| Mechanical strain and defect distributions in GaAs-based diode lasers monitored during operation |
| Appl. Phys. Lett. 86 (2005) 111908/1-3 |
| URL, DOI or PDF-File |
| TGS05a | T. Q. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J. W. Tomm, M. Pommiés, M. Avella, J. Jiménez, M. Oudart and J. Nagle |
| Screening of high-power diode laser bars by optical scanning |
| Appl. Phys. Lett. 87 (2005) 211110/1-3 |
| URL, DOI or PDF-File |
| TBP05 | J. W. Tomm, M. L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt and T. Q. Tien |
| Spectroscopic analysis of external stresses in semiconductor quantum-well materials |
| Mater. Res. Soc. Symp. Proc. 829 (2005) 233-242 |
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| TWG05 | J. W. Tomm, F. Weik, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht, B. Spellenberg, M. Bassler, M. Behringer and J. Luft |
| A novel light-emitting structure for the 3-5 µm spectral range |
| SPIE Proc. 5722 (2005) 319-326 |
| URL, DOI or PDF-File |
| TWK05 | J. W. Tomm, F. Weik, A. Kozlowska, M. Latoszek, M. Bugajski and M. Zbroszczykc |
| New characterization methods for semiconductor lasers |
| SPIE Proc. 6013 (2005) 183-190 |
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| WKT05a | P. Wawrzyniak, A. Kozlowska, J. W. Tomm, A. Malag, F. Weik, M. Teodorczyk and M. Latoszek |
| Screening techniques for high power GaAsP/AlGaAs/GaAs semiconductor lasers |
| SPIE Proc. 5958 (2005) 59582K/1-7 |
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| WTG04a | F. Weik, J. W. Tomm, R. Glatthaar, U. Vetter, D. Szewczy, J. Nurnus, A. Lambrecht, L. Mechold, B. Spellenberg and M. Bassler |
| Mid infrared luminescence imaging and its application to the optimization of light emitting diodes |
| Appl. Phys. Lett. 86 (2005) 041106/1-3 |
| URL, DOI or PDF-File |
| BDP04 | M. L. Biermann, S. Duran, K. Peterson, A. Gerhardt, J. W. Tomm, W. Trzeciakowski and A. Bercha |
| Spectroscopic method of strain analysis in semiconductor quantum-well devices |
| J. Appl. Phys. 96 (2004) 4056-4065 |
| URL, DOI or PDF-File |
| GTO04 | A. Gerhardt, J. W. Tomm, S. Schwirzke-Schaaf, J. Nagle, M. Oudart and Y. Sainte-Marie |
| Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping |
| The European Physical Journal - Applied Physics 27 (2004) 451-454 |
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| GWT04 | A. Gerhardt, F. Weik, T. Q. Tran, J. W. Tomm, T. Elsaesser, J. Biesenbach, H. Müntz, G. Seibold and M. L. Biermann |
| Device deformation during low-frequency pulsed operation of high-power diode bars |
| Appl. Phys. Lett. 84 (2004) 3525-3527 |
| URL, DOI or PDF-File |
| GNV04 | R. Glatthaar, J. Nurnus, U. Vetter, D. Szewczyk, A. Lambrecht, F. Weik and J. W. Tomm |
| Mid-infrared light sources at room temperature based on lead chalcogenides |
| SPIE Proc. 5459 (2004) 54-60 |
| URL, DOI or PDF-File |
| HMT04 | A. Hagen, G. Moos, V. Talalaev and T. Hertel |
| Electronic structure and dynamics of optically excited single-wall carbon nanotubes |
| Appl. Phys. A 78 (2004) 1137-1145 |
| URL, DOI or PDF-File |
| HST04 | F. Hatami, L. Schrottke, J. W. Tomm, V. Talalaev, C. Kristukat, A. R. Goni and W. T. Masselink |
| Optical properties and carrier dynamics of InP quantum dots embedded in GaP |
| SPIE Proc. 5352 (2004) 77-89 |
| URL, DOI or PDF-File |
| TTZ04a | V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, B. V. Novikov, G. É. Cirlin, Y. B. Samsonenko, A. A. Tonkikh, V. A. Egorov, N. K. Polyakov and V. M. Unstinov |
| Spectroscopy of exciton states of InAs quantum molecules |
| Semiconductors 38 (2004) 696-701 |
| URL, DOI or PDF-File |
| TTZ04b | V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, B. V. Novikov and A. A. Tonkikh |
| Transient spectroscopy of InAs quantum dot molecules |
| Appl. Phys. Lett. 85 (2004) 284-286 |
| URL, DOI or PDF-File |
| TGB04 | J. W. Tomm, A. Gerhard, M. L. Biermann and J. P. Holland |
| Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices |
| The European Physical Journal - Applied Physics 27 (2004) 461-464 |
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| TSG04 | J. W. Tomm, V. Strelchuk, A. Gerhard, U. Zeimer, M. Zorn, H. Kissel, M. Weyers and J. Jiménez |
| Properties of As+-implanted and annealed GaAs and InGaAs quantum-wells: structural and band-structure modifications |
| J. Appl. Phys. 95 (2004) 1122-1126 |
| URL, DOI or PDF-File |
| TWG04 | J. W. Tomm, F. Weik, A. Gerhardt, T. Q. Tran, J. Biesenbach, H. Müntz and G. Seibold |
| Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays |
| SPIE Proc. 5336 (2004) 125-131 |
| URL, DOI or PDF-File |
| WTG04b | F. Weik, J. W. Tomm, R. Glatthaar, U. Vetter, D. Szewczyk, J. Nurnus, A. Lambrecht, M. Grau, R. Meyer, M. C. Amann, B. Spellenberg and M. Bassler |
| Materials and structural design of a mid-infrared light-emitting device |
| SPIE Proc. 5366 (2004) 149-157 |
| URL, DOI or PDF-File |
| HMS03 | F. Hatami, W. T. Masselink, L. Schrottke, J. W. Tomm, V. Talalaev, C. Kristukat and A. R. Goni |
| InP quantum dots embedded in GaP: Optical properties and carrier dynamics |
| Phys. Rev. B 67 (2003) 085306/1-8 |
| URL, DOI or PDF-File |
| MDP03 | G. Mussler, L. Däweritz, K. H. Ploog, J. W. Tomm and V. Talalaev |
| Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N) |
| Appl. Phys. Lett. 83 (2003) 1343-1345 |
| URL, DOI or PDF-File |
| RRK03 | F. Rinner, J. Rogg, M. T. Kelemen, M. Mikulla, G. Weimann, J. W. Tomm, E. Thamm and R. Poprawe |
| Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers |
| J. Appl. Phys. 93 (2003) 1848-1850 |
| URL, DOI or PDF-File |
| TMT03 | J. W. Tomm, T. Elsaesser, Y. I. Mazur, H. Kissel, G. G. Tarasov, Z. Y. Zhuchenko and W. T. Masselink |
| Transient luminescence of dense InAs/GaAs quantum dot arrays |
| Phys. Rev. B 67 (2003) 045326/1-8 |
| URL, DOI or PDF-File |
| TGM03b | J. W. Tomm, A. Gerhardt, R. Müller, M. L. Biermann, J. P. Holland, D. Lorenzen and E. Kaulfersch |
| Quantitative strain analysis in AlGaAs-based devices |
| Appl. Phys. Lett. 82 (2003) 4193-4195 |
| URL, DOI or PDF-File |
| TGM03a | J. W. Tomm, A. Gerhardt, R. Müller, V. Malyarchuk, Y. Sainte-Marie, P. Galtier, J. Nagle and J.-P. Landesman |
| Spatially-resolved spectroscopic strain measurements on high-power laser diode bars |
| J. Appl. Phys. 93 (2003) 1354-1362 |
| URL, DOI or PDF-File |
| TRT03 | J. W. Tomm, F. Rinner, E. Thamm, C. Ribbat, R. Sellin and D. Bimberg |
| Analysis of heat flows and their impact on the reliability of high-power diode lasers |
| SPIE Proc. 4993 (2003) 91-99 |
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| DST02 | F. Dörfel, S. Nerreter, J. W. Tomm, R. Grunwald, R. Kunkel and J. Luft |
| Microreflectance inspection of diode laser front facets |
| SPIE Proc. 4648 (2002) 48-54 |
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| GTM02 | A. Gerhardt, J. W. Tomm, R. Müller, A. Bärwolff, D. Lorenzen and J. Donecker |
| Measurement of mounting-induced strain and defects in high-power laser diodes using Fourier-transform photo-current spectroscopy |
| Mat. Sci. Eng. B 91-92 (2002) 476-480 |
| URL, DOI or PDF-File |
| MGR02 | A. Maaßdorf, S. Gramlich, E. Richter, F. Brunner, M. Weyers, G. Tränkle, J. W. Tomm, Y. I. Mazur, D. Nickel, V. Malyarchuk, T. Guenther, C. Lienau, A. Baerwolff and T. Elsaesser |
| Minority-carrier kinetics in heavily doped GaAs: C studied by transient photoluminescence |
| J. Appl. Phys. 91 (2002) 5072-78 |
| URL, DOI or PDF-File |
| MTL02 | V. Malyarchuk, J. W. Tomm and C. Lienau |
| Uniformity tests of individual segments of interband cascade diode laser nanostacks |
| J. Appl. Phys. 92 (2002) 2729-2733 |
| URL, DOI or PDF-File |
| MTT02b | V. Malyarchuk, J. W. Tomm, V. Talalaev, C. Lienau, F. Rinner and M. Baeumler |
| Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well |
| Appl. Phys. Lett. 81 (2002) 346-348 |
| URL, DOI or PDF-File |
| MTT02a | Y. I. Mazur, J. W. Tomm, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko and W. T. Masselink |
| Interdot energy transfer in a system of coupled InAs/GaAs quantum dots |
| Physica E 13 (2002) 255-258 |
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| TGE02 | J. W. Tomm, A. Gerhardt, T. Elsaesser, D. Lorenzen and P. Hennig |
| Simultaneous quantification of strain and defects in high-power diode laser devices |
| Appl. Phys. Lett. 81 (2002) 3269-3271 |
| URL, DOI or PDF-File |
| TGL02 | J. W. Tomm, A. Gerhardt, D. Lorenzen, P. Henning and H. Roehle |
| Diode laser testing by taking advantage of its photoelectric properties |
| SPIE Proc. 4648 (2002) 9-21 |
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| TMM02 | J. W. Tomm, A. Maaßdorf, Y. I. Mazur, S. Gramlich, E. Richter, F. Brunner, M. Weyers, G. Tränkle, V. Malyarchuk, T. Günther and C. Lienau |
| The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy |
| Mat. Sci. Eng. B 91-92 (2002) 25-28 |
| URL, DOI or PDF-File |
| KBN01 | H. Kuenzel, K. Biermann, D. Nickel and T. Elsaesser |
| Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures |
| J. Cryst. Growth 227-228 (2001) 284-288 |
| URL, DOI or PDF-File |
| MTG01 | V. Malyarchuck, J. W. Tomm, T. Günther, R. Müller, R. Kunkel, C. Lienau and J. Luft |
| Large optical cavity waveguides for high-power diode laser applications |
| SPIE Proc. 4287 (2001) 111-7 |
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| MTP01 | Y. I. Mazur, J. W. Tomm, V. Petrov, G. G. Tarasov, H. Kissel, C. Walther, Z. Y. Zhuchenko and W. T. Masselink |
| Staircase-like spectral dependence of ground-state luminescence time-constants in high-density InAs/GaAs quantum dots |
| Appl. Phys. Lett. 78 (2001) 3214-16 |
| URL, DOI or PDF-File |
| SDE01 | A. S. Shkolnik, E. B. Dogonkin, V. P. Evtikhiev, E. Y. Kotelnikov, I. V. Kudryashof, V. G. Talalaev, B. V. Novikov, J. W. Tomm and G. Gobsch |
| Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates |
| Nanotechnology 12 (2001) 512-514 |
| URL, DOI or PDF-File |
| TNG01 | V. G. Talalaev, B. V. Novikov, G. Gobsch, R. Goldhahn, N. Stein, J. W. Tomm, A. Maasdorf, G. E. Cirlin, V. N. Petrov and V. M. Ustinov |
| Radiative recombination features of metastable quantum dot array |
| phys. stat. sol. b 224 (2001) 101-105 |
| URL, DOI or PDF-File |
| BTM00 | A. Baerwolff, J. W. Tomm, R. Müller, S. Weiß, M. Hutter, H. Oppermann and H. Reichl |
| Spectroscopic measurement of mounting-induced strain in optoelectronic devices |
| IEEE Transactions on Advanced Packaging 23 (2000) 170-175 |
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| BDG00 | W. Braun, P. Dowd, C.-Z. Guo, S.-L. Chen, C. M. Ryu, U. Koelle, S. R. Johnson, Y.-H. Zhang, J. W. Tomm, T. Elsaesser and D. J. Smith |
| Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100 nm-1550 nm range |
| J. Appl. Phys. 88 (2000) 3004-3014 |
| URL, DOI or PDF-File |
| BRB00 | F. Brunner, E. Richter, T. Bergunde, I. Rechenberg, A. Bhattacharya, A. Maassdorf, J. W. Tomm, P. Kurpas, M. Achouche, J. Würfel and M. Weyers |
| Effect of high-temperature annealing on GalnP/GaAs HBT structures grown by LP-MOVPE |
| J. Electron. Mater. 29 (2000) 205-209 |
| URL, DOI or PDF-File |
| EBS00 | G. Erbert, A. Bärwolff, J. Sebastian and J. W. Tomm |
| High-power broad-area diode lasers and laser bars |
| High-power diode lasers, Fundamentals, Technology, Applications, R. Diehl (Ed.), Springer Verlag, Berlin 78 (2000) 173-223 |
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| HAT00 | K. H. Herrmann, H. Al-Otaibi and J. W. Tomm |
| Photocurrent spectroscopy of QW GRIN laser structures |
| Mat. Sci. Eng. B 74 (2000) 61-65 |
| URL, DOI or PDF-File |
| KDC00 | A. Kummrow, J. Dreyer, C. Chudoba, J. Stenger, E. T. J. Nibbering and T. Elsaesser |
| Ultrafast charge transfer studied by femtosecond IR-spectroscopy and ab initio calculations |
| J. Chin. Chem. Soc. 47 (2000) 721-8 |
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| PBV00 | R. Puchert, A. Bärwolff, M. Voss, U. Menzel, J. W. Tomm and J. Luft |
| Transient thermal behavior of high power diode laser arrays |
| IEEE T Compon Pack B 23 (2000) 95-100 |
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| TMZ00 | G. Tarasov, Y. I. Mazur, Z.Ya.Zhuchenko, A. Maaßdorf, D. Nickel, J. W. Tomm, H. Kissel, C. Walther and W. T. Masselink |
| Carrier transfer in self-assembled coupled InAs/GaAs quantum dots |
| J. Appl. Phys. 88 (2000) 7162-7170 |
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| TBa00 | J. W. Tomm and A. Bärwolff |
| Aging Properties of 840 nm ion-implanted VCSEL's monitored by analysis of their photoelectric properties |
| SPIE Proc. 3946 (2000) 30-5 |
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| TBE00 | J. W. Tomm, A. Bärwolff, T. Elsaesser and J. Luft |
| Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers |
| Appl. Phys. Lett. 77 (2000) 747-749 |
| URL, DOI or PDF-File |
| TGL00 | J. W. Tomm, T. Günther, C. Lienau, A. Gerhardt and J. Donecker |
| Near-field photocurrent spectroscopy in diode laser devices |
| J. Crystal Growth 210 (2000) 296-302 |
| URL, DOI or PDF-File |
| TTB00 | J. W. Tomm, E. Thamm, A. Baerwolff, T. Elsaesser, J. Luft, M. Baeumler, K. S. Mueller, W. Jantz, I. Rechenberg and G. Erbert |
| Facet degradation of high-power diode laser arrays |
| Appl. Phys. A 70 (2000) 377-381 |
| URL, DOI or PDF-File |
| TUQ00 | J. W. Tomm, B. Ullrich, X. G. Qiu, A.Ohtomo, M. Kawasaki, H. Koinuma and Y. Segawa |
| Optical and photoelectrical properties of oriented ZnO films |
| J. Appl. Phys. 87 (2000) 1844-8 |
| URL, DOI or PDF-File |
| UTD00 | B. Ullrich, J. W. Tomm, N. M. Dushkina, Y. Tomm, H. Sakai and Y. Segawa |
| Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition |
| Solid State Commun. 116 (2000) 33-5 |
| URL, DOI or PDF-File |
| HTo99 | K. H. Herrmann and J. W. Tomm |
| Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy |
| SPIE Proc. 3890 (1999) 2-9 |
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| HTA99b | K. H. Herrmann, J. W. Tomm and H. Al-Otaibi |
| Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures |
| SPIE Proc. 3890 (1999) 70-74 |
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| HTA99a | K. H. Herrmann, J. W. Tomm and H. Al-Otaibi |
| Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index structures |
| Semic. Sci. & Technol. 14 (1999) 293-297 |
| URL, DOI or PDF-File |
| TML99 | G. G. Tarasov, Y. I. Mazur, M. P. Lisitsa, S. R. Lavoric, A. S. Rakitin, J. W. Tomm and A. P. Litvinchuk |
| Far-infrared reflectivity study of lattice dynamics of narrow-gap HgCdMnTe semiconductors |
| Semic. Sci. & Technol. 14 (1999) 187-197 |
| URL, DOI or PDF-File |
| TRM99 | G. G. Tarasov, A. Rakitin, Y. I. Mazur, J. W. Tomm and W. T. Masselink |
| Phonon-assisted magnetopolaron effect in diluted magnetic semiconductors |
| Phys. Rev. B 59 (1999) 2731-2736 |
| URL, DOI or PDF-File |
| Tom99 | J. W. Tomm |
| Probing diode lasers with light - photocurrent reveals information on defects and strain in optoelectronic devices |
| LEOS Letters 13 (1999) 20-22 |
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| TML99 | J. W. Tomm, Y. I. Mazur, M. P. Lisitsa, G. G. Tarasov and F. Fuchs |
| Photoluminescence excitation due to hot excitons in narrow-gap Hg1-x-yCdxMnyTe |
| Semic. Sci. & Technol. 14 (1999) 148-155 |
| URL, DOI or PDF-File |
| TMB99a | J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiß, M. Hutter, E. Kaulfersch and H. Reichl |
| Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes |
| J. Appl. Phys. 86 (1999) 1196-1201 |
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| TMB99b | J. W. Tomm, R. Müller, A. Bärwolff, M. Neuner, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt and J. Donecker |
| Direct spectroscopic measurement of packaging-induced strains in high-power laser diode arrays |
| Proc. SPIE 3626 (1999) 138-147 |
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| HKM98 | W. Hoerstel, W. Kraak, W. T. Masselink, Y. I. Mazur, G. G. Tarasov, E. V. Kurmenko and J. W. Tomm |
| Spin-flip effects in the magnetoluminescence and magneto-resistance of semimagnetic narrow-gap Hg1-x-yCdxMnyTe |
| Phys. Rev. B 58 (1998) 4531-4537 |
| URL, DOI or PDF-File |
| Men98 | U. Menzel |
| Self consistent calculation of facet heating in asymmetrically coated edge emitting diode lasers |
| Semic. Sci. & Technol. 13 (1998) 265-276 |
| URL, DOI or PDF-File |
| MPB98 | U. Menzel, R. Puchert, A. Bärwolff and A. Lau |
| Facet heating and axial temperature profiles in high power AlGaAs/GaAs laser diodes (invited paper) |
| Microelectron. Reliab. 38 (1998) 821-825 |
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| MKl98 | R. Müller and A. Klehr |
| Polarization dynamics of strained 1.3 mm InGaAsP/InP lasers: Spectral properties and lateral near field behaviour |
| Quant. and Semiclassical Opt. 10 (1998) 37-50 |
| URL, DOI or PDF-File |
| PTJ98 | R. Puchert, J. W. Tomm, A. Jaeger, A. Bärwolff, J. Luft and W. Späth |
| Emitter failure and thermal facet load in high-power laser diode arrays |
| Appl. Phys. A 66 (1998) 483 - 486 |
| URL, DOI or PDF-File |
| TLM98 | G. G. Tarasov, S. R. Lavoric, Y. I. Mazur and J. W. Tomm |
| FIR phonon spectroscopy of quanternary Hg1-x-yCdx MnyTe |
| J. Crystal Growth 184/185 (1998) 1214 -1218 |
| URL, DOI or PDF-File |
| TMR98 | G. G. Tarasov, Y. I. Mazur, A. Rakitin, M. P. Lisitsa, S. R. Lavoric, J. W. Tomm and A. Litvinchuk |
| Spectroscopy of phonon states in narrow-gap HgCdMnTe(Se) semiconductors |
| Asian J. of Spectrosc. 2 (1998) 1-29 |
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| TBJ98 | J. W. Tomm, A. Bärwolff, A. Jaeger, T. Elsaesser, J. Bollmann, W. T. Masselink, A. Gerhardt and J. Donecker |
| Deep level spectroscopy of high-power laser diode arrays |
| J. Appl. Phys. 84 (1998) 1325-1332 |
| URL, DOI or PDF-File |
| TBL98 | J. W. Tomm, A. Bärwolff, C. Lienau, A. Richter, A. Jaeger, J. Donecker, A. Gerhardt, F. X. Daiminger and S. Heinemann |
| Monitoring of the aging of high-power laser diode arrays |
| SPIE -Proc. 3359 (1998) 2-13 |
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| TBP98 | J. W. Tomm, A. Bärwolff, R. Puchert, A. Jaeger and T. Elsaesser |
| Optical probes as tools for the investigation of aging properties of high-power laser diode arrays |
| SPIE Proc. 3244 (1998) 576-584 |
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| TMB98 | J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt and J. Donecker |
| Direct spectroscopic measurement of thermally induced strain in high-power optoelectronic devices |
| Appl. Phys. Lett. 73 (1998) 3908-3910 |
| URL, DOI or PDF-File |